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Hydrogen behavior in Mg+-implanted graphite

Published online by Cambridge University Press:  01 April 2006

W. Jiang ,
V. Shutthanandan ,
Y. Zhang ,
S. Thevuthasan ,
W.J. Weber  and
G.J. Exarhos
W. Jiang*
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
V. Shutthanandan
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
Y. Zhang
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
S. Thevuthasan
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
W.J. Weber
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
G.J. Exarhos
Affiliation:
Pacific Northwest National Laboratory, Richland, Washington 99352
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A graphite wafer has been implanted with Mg+ to produce a uniform Mg concentration. Subsequent H+ implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+ and H+ ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.

Keywords

CompositeDiffusionIon beam analysis
Type
Rapid Communications
Information
Journal of Materials Research , Volume 21 , Issue 4 , April 2006 , pp. 811 - 815
Copyright
Copyright © Materials Research Society 2006

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