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High-temperature annealing behavior of ion-implanted spinel single crystals

Published online by Cambridge University Press:  01 December 2004

S.E. Enescu ,
L. Thomé ,
A. Gentils  and
T. Thomé
S.E. Enescu
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, F-91405 Orsay, France; and Horia Hulubei National Institute for Physics and Nuclear Engineering, 76900 Bucharest, Romania
L. Thomé*
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, F-91405 Orsay, France
A. Gentils
Affiliation:
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, F-91405 Orsay, France; and Commissariat à l’Energie Atomique-Cadarache, DEN/DEC/SESC, F-13108 St. Paul-lez-Durance, France
T. Thomé
Affiliation:
CEA-Saclay, DSM/DRECAM/SPCSI, F-91191 Gif-sur-Yvette Cedex, France
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

This paper reports modifications of the chemical and structural properties of MgAl2O4 single crystals implanted with Cs ions and submitted to high-temperature annealing. The composition changes, the damage created in the three sublattices (Al, Mg and O) of the crystals, and the behavior of implanted ions were studied by Rutherford backscattering and channeling experiments as a function of the Cs fluence and annealing temperature. The data show that annealing above 700–800 °C induces a huge modification of the stoichiometry of the material, a decrease of the lattice disorder, and an increase of the fraction of Cs atoms located in substitutional lattice sites. These results have to be taken into account for the future use of spinel as a matrix for the transmutation of nuclear waste.

Keywords

CeramicIon beam analysisAnnealing
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 12 , December 2004 , pp. 3463 - 3473
Copyright
Copyright © Materials Research Society 2004

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References

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