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High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

Published online by Cambridge University Press:  03 March 2011

A. Bardal ,
O. Eibl ,
Th. Matthée ,
G. Friedl  and
J. Wecker
A. Bardal
Affiliation:
Siemens Research Laboratories, Otto Hahn Ring 6, 8000 Munich 83, Germany and SINTEF Applied Physics, 7034 Trondheim, Norway
O. Eibl
Affiliation:
Siemens Research Laboratories, Otto Hahn Ring 6, 8000 Munich 83, Germany
Th. Matthée
Affiliation:
Siemens Research Laboratories, 8520 Erlangen, Germany
G. Friedl
Affiliation:
Siemens Research Laboratories, 8520 Erlangen, Germany
J. Wecker
Affiliation:
Siemens Research Laboratories, 8520 Erlangen, Germany
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Extract

The microstructures of YBa2Cu3O7−δ (YBCO) thin films grown on Si with Y-stabilized ZrO2 (YSZ) and Y2O3 buffer layers were characterized by means of high-resolution electron microscopy. At the Si–YSZ interface, a 2.5 nm thick layer of regrown amorphous SiOx is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si–YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ–Y2O3 interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2〈110〉 are present at this interface along with unrelaxed elastic misfit stresses. The Y2O3–YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y2O3 was found to be a barium-oxygen layer.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 8 , Issue 9 , September 1993 , pp. 2112 - 2127
Copyright
Copyright © Materials Research Society 1993

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