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High-energy (MeV) ion-beam mixing of Ti with SiC and Si3N4

Published online by Cambridge University Press:  31 January 2011

R. S. Bhattacharya ,
A. K. Rai  and
P. P. Pronko
R. S. Bhattacharya
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432
A. K. Rai
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432
P. P. Pronko
Affiliation:
Universal Energy Systems, Inc., 4401 Dayton-Xenia Road, Dayton, Ohio 45432
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Abstract

Ion-beam mixing of Ti layers with sintered α-SiC and hot-pressed Si3N4 was measured for 1 McV Au+ at doses of 1X1016 cm−2 and 5X1016 cm−2. Rutherford backscattering (RBS) and cross-section transmission electron microscopy (XTEM) were used to evaluate the mixing. Mixing was observed in Ti/SiC system; however, there was no mixing in Ti/Si3N4 system. Results are discussed in light of the enthalpy of mixing criterion for metal-insulator systems.

Type
Articles
Information
Journal of Materials Research , Volume 2 , Issue 2 , April 1987 , pp. 211 - 215
Copyright
Copyright © Materials Research Society 1987

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References

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