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High performance half-Heusler thermoelectric materials with refined grains and nanoscale precipitates

Published online by Cambridge University Press:  07 June 2012

Cui Yu ,
Hanhui Xie ,
Chenguang Fu ,
Tiejun Zhu  and
Xinbing Zhao
Cui Yu
Affiliation:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; and Science and Technology on ASIC Laboratory, Shijiazhuang 050051, China
Hanhui Xie
Affiliation:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Chenguang Fu
Affiliation:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Tiejun Zhu*
Affiliation:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; and Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China
Xinbing Zhao
Affiliation:
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

(Zr, Hf)NiSn-based half-Heusler alloys with refined grains were prepared by melt spinning and spark plasma sintering. The grain size of the melt-spun (MS) thin ribbons varied from ∼500 nm to ∼3 μm. X-ray diffraction analysis showed that single phased alloys were obtained. Nanoscale precipitates dispersed in the matrix could be observed in both the MS ribbons and sintered bulk samples, which increased the carrier concentration and electrical conductivity. The lattice thermal conductivity decreased by more than 20% below 100 K and 5–20% from 200 to 1000 K, compared with the levitation melted counterparts, due to the refined grain sizes. The maximum dimensionless figure of merit ZT value reached ∼0.9 for the MS Hf0.6Zr0.4NiSn0.98Sb0.02sample.

Keywords

ZrNiSnmelt spinningthermoelectric propertiesthermal conductivityphonon scattering
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 19 , 14 October 2012 , pp. 2457 - 2465
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Snyder, G.J. and Toberer, E.S.: Complex thermoelectric materials. Nat. Mater. 7, 105 (2008).CrossRefGoogle ScholarPubMed
Pei, Y.Z., LaLonde, A., Iwanaga, S., and Snyder, G.J.: High thermoelectric figure of merit in heavy hole dominated PbTe. Energy Environ. Sci. 4, 2085 (2011).CrossRefGoogle Scholar
Zhu, T.J., Xiao, K., Yu, C., Shen, J.J., Yang, S.H., Zhou, A.J., Zhao, X.B., and He, J.: Effects of yttrium doping on the thermoelectric properties of Hf0.6Zr0.4NiSn0.98Sb0.02 half-Heusler alloys. J. Appl. Phys. 108, 044903 (2010).CrossRefGoogle Scholar
Uher, C., Yang, J., Hu, S., Morelli, D.T., and Meisner, G.P.: Transport properties of pure and doped MNiSn (M=Zr, Hf). Phys. Rev. B 59, 8615 (1999).CrossRefGoogle Scholar
Hohl, H., Ramirez, A.P., Goldmann, C., Ernst, G., Woelfing, B., and Bucher, E.: Efficient dopants for ZrNiSn-based thermoelectric materials. J. Phys. Condens. Matter 11, 1697 (1999).CrossRefGoogle Scholar
Ogut, S. and Robe, K.M.: Band gap and stability in the ternary intermetallic compounds NiSnM (M=Ti, Zr, Hf): A first-principles study. Phys. Rev. B 51, 10443 (1995).CrossRefGoogle ScholarPubMed
Chaput, L., Tobola, J., Pécheur, P., and Scherrer, H.: Electronic structure and thermopower of Ni(Ti0.5Hf0.5)Sn and related half-Heusler phases. Phys. Rev. B 73, 045121 (2006).CrossRefGoogle Scholar
Bhattacharya, S., Tritt, T.M., Xia, Y., Ponnambalam, V., Poon, S.J., and Thadhani, N.: Grain structure effects on the lattice thermal conductivity of Ti-based half-Heusler alloys. Appl. Phys. Lett. 81, 43 (2002).CrossRefGoogle Scholar
Bhattacharya, S., Skove, M.J., Russell, M., Tritt, T.M., Xia, Y., Ponnambalam, V., Poon, S.J., and Thadhani, N.: Effect of boundary scattering on the thermal conductivity of TiNiSn-based half-Heusler alloys. Phys. Rev. B 77, 184203 (2008).CrossRefGoogle Scholar
Sharp, J.W., Poon, S.J., and Goldsmid, H.J.: Boundary scattering and the thermoelectric figure of merit. Phys. Status Solidi A 187, 507 (2001).3.0.CO;2-M>CrossRefGoogle Scholar
Shen, Q., Chen, L., Goto, T., Hirai, T., Yang, J., Meisner, G.P., and Uher, C.: Effects of partial substitution of Ni by Pd on the thermoelectric properties of ZrNiSn-based half-Heusler compounds. Appl. Phys. Lett. 79, 4165 (2001).CrossRefGoogle Scholar
Culp, S.R., Poon, S.J., Hickman, N., Tritt, T.M., and Blumm, J.: Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C. Appl. Phys. Lett. 88, 042106 (2006).CrossRefGoogle Scholar
Yu, C., Zhu, T.J., Shi, R.Z., Zhang, Y., Zhao, X.B., and He, J.: High-performance half-Heusler thermoelectric materials Hf1-xZrxNiSn1-ySby prepared by levitation melting and spark plasma sintering, Acta Mater. 57, 2757 (2009).CrossRefGoogle Scholar
Zhu, T.J., Zhao, X.B., and Hu, S.H.: Phase transition of FeSi2 and Fe2Si5 based alloys prepared by melt spinning. J. Mater. Sci. Lett. 20, 1831 (2001).CrossRefGoogle Scholar
Hasaka, M., Morimura, T., Sato, H., and Akashima, H.: Thermoelectric properties of Tix(HfyZr1-y)1-xNiSn0.998Sb0.002 half-Heusler ribbons. J. Electron. Mater. 8, 1320 (2009).CrossRefGoogle Scholar
Yu, C., Zhu, T.J., Xiao, K., Shen, J.J., Yang, S.H., and Zhao, X.B.: Reduced grain sizes and improved thermoelectric properties in melt spun (Hf, Zr)NiSn half-Heusler alloys. J. Electron. Mater. 39, 2008 (2010).CrossRefGoogle Scholar
Yu, C., Zhu, T.J., Xiao, K., Shen, J.J., and Zhao, X.B.: Microstructure and thermoelectric properties of (Zr, Hf)NiSn-based half-Heusler alloys by melt spinning and spark plasma sintering. Funct. Mater. Lett. 3, 4 (2010).CrossRefGoogle Scholar
Yu, C., Zhu, T.J., Yang, S.H., Shen, J.J., and Zhao, X.B.: Preparation and thermoelectric properties of polycrystalline nonstoichiometric Yb14MnSb11 Zintl compounds. Phys. Status Solidi RRL 4, 212 (2010).CrossRefGoogle Scholar
Vandersande, J.W., Zoltan, A., and Wood, C.: Accurate determination of specific heat at high temperatures using the flash diffusivity method. Int. J. Thermophys. 10, 251 (1989).CrossRefGoogle Scholar
Kimura, Y., Tanoguchi, T., and Kita, T.: Vacancy site occupation by Co and Ir in half-Heusler ZrNiSn and conversion of the thermoelectric properties from n-type to p-type. Acta Mater. 58, 4354 (2010).CrossRefGoogle Scholar
Gofryk, K., Kaczorowski, D., Plackowski, T., Mucha, J., Leithe-Jasper, A., Schnelle, W., and Grin, Y.: Magnetic, transport, and thermal properties of the half-Heusler compounds ErPdSb and YPdSb. Phys. Rev. B 75, 224426 (2007).CrossRefGoogle Scholar
Kimura, Y., Ueno, H., and Mishima, Y.: Thermoelectric properties of directionally solidified half-Heusler (Ma0.5, Mb0.5)NiSn (Ma, Mb = Hf, Zr, Ti) alloys. J. Electron. Mater. 38, 934 (2009).CrossRefGoogle Scholar
He, J., Hitchcock, D., Bredeson, I., Hickman, N., Tritt, T.M., and Zhang, S.N.: Probing lattice dynamics of Cd2Re2O7 pyrochlore: Thermal transport and thermodynamics study. Phys. Rev. B 81, 134302 (2010).CrossRefGoogle Scholar
Cahill, D.G., Watson, S.K., and Pohl, R.O.: Lower limit to the thermal conductivity of disordered crystals, Phys. Rev. B 46, 6131 (1992).CrossRefGoogle Scholar
Berret, J.F. and Meissner, M.: How universal are the low temperature acoustic properties of glasses? Z. Phys. B: Condens. Matter 70, 65 (1988).CrossRefGoogle Scholar
Yang, J., Morelli, D.T., Meisner, G.P., Chen, W., Dyck, J.S., and Uher, C.: Influence of electron-phonon interaction on the lattice thermal conductivity of Co1-xNixSb3. Phys. Rev. B 65, 094115 (2002).CrossRefGoogle Scholar
Tang, M.B. and Zhao, J.T.: Low temperature transport and thermal properties of half-Heusler alloy Zr0.25Hf0.25Ti0.5NiSn. J. Alloys Compd. 475, 5 (2009).CrossRefGoogle Scholar
Qiu, P.F., Yang, J., Huang, X.Y., Chen, X.H., and Chen, L.D.: Enhanced thermoelectric performance by the combination of alloying and doping in TiCoSb-based half-Heusler compounds. Appl. Phys. Lett. 96, 152105 (2010).CrossRefGoogle Scholar
Kim, W., Zide, J., Gossard, A., Klenov, D., Stemmer, S., Shakouri, A., and Majumdar, A.: Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. Phys. Rev. Lett. 96, 045901 (2006).CrossRefGoogle ScholarPubMed
Kawaharada, Y., Uneda, H., Muta, H., Kurosaki, K., and Yamanaka, S.: High temperature thermoelectric properties of CoN1-xMxSn half-Heusler compounds. J. Alloys Compd. 64, 59 (2004).CrossRefGoogle Scholar