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Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

Published online by Cambridge University Press:  03 March 2011

Y. Morikawa ,
M. Hirai ,
A. Ohi ,
M. Kusaka  and
M. Iwami
Y. Morikawa
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
M. Hirai*
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan
A. Ohi
Affiliation:
Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
M. Kusaka
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan
M. Iwami
Affiliation:
Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Keywords

CPlasma-enhanced CVD (PECVD) (deposition)Si
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 5 , May 2007 , pp. 1275 - 1280
Copyright
Copyright © Materials Research Society 2007

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References

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