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Heteroepitaxial growth and structural analysis of epitaxial α–Fe2O3(1010) on TiO2(001)

Published online by Cambridge University Press:  03 March 2011

Joshua R. Williams
Affiliation:
Fundamental Science Division, Pacific Northwest National Laboratory, Richland, Washington 99352
Chongmin Wang
Affiliation:
Fundamental Science Division, Pacific Northwest National Laboratory, Richland, Washington 99352
Scott A. Chambers*
Affiliation:
Fundamental Science Division, Pacific Northwest National Laboratory, Richland, Washington 99352
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

We grew epitaxial α–Fe2O3(1010) on TiO2(001) rutile by oxygen plasma-assisted molecular-beam epitaxy. High-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), and x-ray diffraction pole figures confirm that the film is composed of four different in-plane orientations rotated by 90° relative to one another. For a given Fe2O3 unit cell, the lattice mismatch along the parallel [0001]Fe2O3 and [100]TiO2 directions is nominally +67%. However, due to a 3-fold repetition of the slightly distorted square symmetry of anion positions within the Fe2O3 unit cell, there is a coincidental anion alignment along the [0001]Fe2O3 and [100]TiO2 directions, which results in an effective lattice mismatch of only −0.02% along this direction. The lattice mismatch is nearly 10% in the orthogonal [1120]Fe2O3 and [100]TiO2 directions. The film is highly ordered and well registered to the substrate despite a large lattice mismatch in one direction. The film grows in registry with the substrate along the parallel [0001]Fe2O3 and [100]TiO2 directions and nucleates dislocations along the orthogonal [1120]Fe2O3 [100]TiO2 directions.

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Articles
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1.Idriss, H., Legare, P. and Maire, G.: Dark and photoreactions of acetates on TiO2(110) single crystal surface. Surf. Sci. 515, 413 (2002).Google Scholar
2.Kawahara, T., Konishi, Y., Tada, H., Tohge, N., Nishii, J. and Ito, S.: A patterned TiO2(anatase)/TiO2(rutile) bilayer-type photocatalyst: Effect of the anatase/rutile junction on the photocatalytic activity. Angew. Chem. Int. Ed. Engl. 41, 2811 (2002).3.0.CO;2-#>CrossRefGoogle Scholar
3.Diebold, U.: The surface science of titanium dioxide. Surf. Sci. Rep. 48, 53 (2003).Google Scholar
4.Weiss, W. and Ranke, W.: Surface chemistry and catalysis on well-defined epitaxial iron-oxide layers. Prog. Surf. Sci. 70, 1 (2002).CrossRefGoogle Scholar
5.Dimoulas, A., Vellianitis, G., Mavrou, G., Apostolopoulos, G., Travlos, A., Wiemer, C., Fanciulli, M. and Rittersma, Z.M.: La2Hf2O7 high-kappa gate dielectric grown directly on Si(001) by molecular-beam epitaxy. Appl. Phys. Lett. 85, 3205 (2004).Google Scholar
6.Yamamoto, H., Aoki, K., Tsukada, A. and Naito, M.: Growth of Ba1−xKxBiO3 thin films by molecular beam epitaxy. Physica C 412–14, 192 (2004).CrossRefGoogle Scholar
7.Pearton, S.J., Heo, W.H., Ivill, M., Norton, D.P. and Steiner, T.: Dilute magnetic semiconducting oxides. Semicond. Sci. Tech. 19 R59 (2004).Google Scholar
8.Chambers, S.A. and Farrow, F.C.: MRS Bull. 28, 729 (2003).Google Scholar
9.Yoshimoto, M., Sasaki, A. and Akiba, S.: Nanoscale epitaxial growth control of oxide thin films by laser molecular beam epitaxy—Towards oxide nanoelectronics. Sci. Technol. Adv. Mat. 5, 527 (2004).CrossRefGoogle Scholar
10.Ohtomo, A. and Hwang, H.Y.: A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface. Nature 427, 423 (2004).Google Scholar
11.Koyama, T. and Chichibu, S.F.: Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO. J. Appl. Phys. 95, 7856 (2004).Google Scholar
12.Chambers, S.A.: Epitaxial growth and properties of thin film oxides. Surf. Sci. Rep. 39, 105 (2000).Google Scholar
13.Narayan, J., Tiwari, P., Chen, X., Singh, J., Chowdhury, R. and Zheleva, T.: Epitaxial-growth of TiN films on (100) silicon substrates by laser physical vapor-deposition. Appl. Phys. Lett. 61, 1290 (1992).CrossRefGoogle Scholar
14.Narayan, J. and Larson, B.C.: Domain epitaxy: A unified paradigm for thin film growth. J. Appl. Phys. 93, 278 (2003).CrossRefGoogle Scholar
15.Narayan, J., Dovidenko, K., Sharma, A. and Oktyabrksy, S.: Defects and interfaces in epitaxial ZnO/α–Al2O3 and AlN/ZnO/α–Al2O3 heterostuctures. J. Appl. Phys. 84, 2597 (1998).Google Scholar
16.Lyubinetsky, I., Thevuthasan, S., McCready, D.E. and Baer, D.R.: Formation of single-phase oxide nanoclusters: Cu2O on SrTiO3(100). J. Appl. Phys. 94, 7926 (2003).CrossRefGoogle Scholar