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Heat transport through interfaces with and without misfit dislocation arrays

Published online by Cambridge University Press:  15 October 2012

Anja Hanisch-Blicharski ,
Boris Krenzer ,
Simone Wall ,
Annika Kalus ,
Tim Frigge  and
Michael Horn-von Hoegen
Anja Hanisch-Blicharski*
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
Boris Krenzer
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
Simone Wall
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
Annika Kalus
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
Tim Frigge
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
Michael Horn-von Hoegen
Affiliation:
Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE), University of Duisburg-Essen, 47057 Duisburg, Germany
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In spite of its large lattice mismatch, Bi grows epitaxially in (111) orientation and almost free of defects on Si substrates. On Si(111), the Bi film is under compressive strain of less than 2% and shows a 6–7 registry to the Si(111)-(7 × 7) substrate. On Si(001), the compressive lattice strain of 2.3% results in the formation of an array of misfit dislocations with a periodicity of 20 nm. We studied the cooling process of ultrathin bismuth films deposited on Si(111) and Si(001) substrates upon excitation with short laser pulses. With ultrafast electron diffraction, we determined the thermal boundary conductance σK from the exponential decay of the transient film temperature. Within the error bars of 7%, the experimentally determined thermal boundary conductances are the same for both substrates and thus independent of the presence of a periodic array of misfit dislocations and the different substrate orientation.

Type
Research Article
Information
Journal of Materials Research , Volume 27 , Issue 21 , 14 November 2012 , pp. 2718 - 2723
Copyright
Copyright © Materials Research Society 2012

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