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Growth of Ti thin films on sapphire substrates

Published online by Cambridge University Press:  31 January 2011

S. Rao Peddada ,
I. M. Robertson  and
H. K. Birnbaum
S. Rao Peddada
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
I. M. Robertson
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
H. K. Birnbaum
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana–Champaign, Urbana, Illinois 61801
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Abstract

Titanium thin films have been grown by electron-beam physical vapor deposition on the (0001) surface of sapphire (single crystal α−Al2O3) substrates at growth temperatures ranging from 295 to 1223 K. Single phase α−Ti films grew at all growth temperatures, even at 1223 K which is above the α-β transition temperature of Ti. Crystal quality, as measured by the width of x-ray rocking curves, was found to improve, and the elastic strain to increase, as the growth temperature increased from 295 K to 1023 K. The epitaxial relationship between the Ti and sapphire was (0002)Ti ‖ (0006)Al2O3 and [1120]Ti ‖ [1010]Al2O3. The extent of interdiffusion across the Ti/Al2O3 interface was observed to be small (< 20 nm) at all growth temperatures.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 7 , July 1997 , pp. 1856 - 1865
Copyright
Copyright © Materials Research Society 1997

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References

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