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Growth of in situ multilayer diamond films by varying substrate–filament distance in hot-filament chemical vapor deposition

Published online by Cambridge University Press:  05 December 2012

Mubarak Ali  and
Mustafa Ürgen
Mubarak Ali*
Affiliation:
Department of Physics, COMSATS Institute of Information Technology (CIIT), Islamabad 44000, Pakistan
Mustafa Ürgen
Affiliation:
Department of Metallurgical and Materials Engineering, Istanbul Technical University, 34469 Maslak, Istanbul, Turkey
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Single and multilayer diamond films were grown on silicon by varying substrate distance in hot-filament chemical vapor deposition. The grown films were characterized by scanning electron microscope (SEM) and Raman spectroscopy. From SEM surface images, it was observed that the films grown at substrate distances of 8, 7, and 6 mm and temperatures of 740, 780, and 830 °C possessed cauliflower, pseudocubes, and finally well-faceted cubes morphology. SEM fracture cross-sectional investigations revealed that growth of pseudocubes initiated on the top of cauliflower structure. By using the parametric relations gathered from single layer diamond growth studies, first time, multilayer diamond coatings were grown in situ with tunable thickness by only varying the substrate distance from filament assembly during deposition.

Keywords

chemical vapor depositionsurface morphologycrystal structuregrowth mechanisms
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 24 , 28 December 2012 , pp. 3123 - 3129
Copyright
Copyright © Materials Research Society 2012

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References

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