Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T23:52:14.765Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of heteroepitaxial GaSb thin films on Si(100) substrates

Published online by Cambridge University Press:  03 March 2011

Thang Nguyen ,
Walter Varhue ,
Edward Adams ,
Mark Lavoie  and
Stephen Mongeon
Thang Nguyen
Affiliation:
Department of Electrical and Computer Engineering, University of Vermont, Burlington, Vermont 05405
Walter Varhue*
Affiliation:
Department of Electrical and Computer Engineering, University of Vermont, Burlington, Vermont 05405
Edward Adams
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
Mark Lavoie
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
Stephen Mongeon
Affiliation:
IBM Corporation, Essex Junction, Vermont 05405
*
a) Address correspondence to this author.e-mail: [email protected]
Get access

Abstract

The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.

Keywords

EpitaxySemiconductorThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 8 , August 2004 , pp. 2315 - 2321
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Chang, C-H., Ludeke, R., Chang, L.I. and Esaki, L.: Molecular-beam epitaxy (MBE) of In1–xGaxAs and GaSb1–xAsy. Appl. Phys. Lett. 31, 759 (1977).CrossRefGoogle Scholar
2.Shanabrook, B.V., Bravos-Carter, W., Bass, R., Bennett, B.R., Boos, J.B., Bewley, W.W., Bracker, A.S., Culbertson, J.C., Glaser, E.R., Kruppa, W., Magno, R., Moore, W.J., Meyer, J.R., Nosho, B.Z., Park, D., Thibado, P.M., Twigg, M.E., Wagner, R.J., Waterman, J.R., Whitman, L.J. and Yang, M.J.Engineered heterostructures of 6.1 A III-V semiconductors for advanced electronic and optoelectronic applications in Engineered Nanostructural Films and Materials, edited by Lakhtakia, A. and Messier, R.F.. In SPIE Proceedings 3790, (1999). pp. 13–22Google Scholar
3.Thibado, P.M., Bennett, B.R., Twigg, M.E., Shanabrook, B.V. and Whitman, L.J.: Evolution of GaSb epitaxy on GaAs(001)-c(4x4). J. Vac. Sci. Technol. A 14, 885 (1996).CrossRefGoogle Scholar
4.Fang, S.F., Adomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C. and Otsuka, N.: GaAs and other compound semiconductors on Si. J. Appl. Phys. 68 R31 (1990).CrossRefGoogle Scholar
5.Kawanami, H.: Heteropitaxial technologies of III-V on Si. Solar Energy Mater. Sol. Cells 66, 479 (2001).CrossRefGoogle Scholar
6.Nozawa, K. and Horikoshi, Y.: Low threading dislocation density GaAs on Si(100) with InGaAs/GaAs strained-layer superlatticegrown by migration-enhanced epitaxy. Jpn. J. Appl. Phys. 30 L668 (1991).Google Scholar
7.Takagi, Y., Yonezu, H., Hachiya, Y. and Pak, K.: Reduction mechanism of threading dislocation density in GaAs epilayer grown on Si substrate by high temperature annealing. Jpn. J. Appl. Phys. 33, 3368 (1994).CrossRefGoogle Scholar
8.Cheng, J.Y., Ross, C.A., Thomas, E.L., Smith, H.I. and Vancso, G.J.: Fabrication of nanostructures with long-range order using block copolymer lithography. Appl. Phys. Lett. 81, 3657 (2002).CrossRefGoogle Scholar
9.Meyer, M. Motorola and IQE grow GaAs on large-area Si substrates (features: epitaxial growth). Compound Semiconductor Oct (2001)Google Scholar
10.Uchida, H., Soga, T., Nishikawa, H., Jimbo, T. and Umeno, M.: Reduction of dislocation density by thermal annealing for GaAs/GaSb/Si heterostructures. J. Cryst. Growth 150, 681 (1995).CrossRefGoogle Scholar
11.Dura, J.A., Vigliante, A., Golding, T.D. and Moss, S.C.: Epitaxial growth of Sb/GaSb structures: An example of V/III-V heteroepitaxy. J. Appl. Phys. 77, 21 (1995).CrossRefGoogle Scholar