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Growth of diamond by rf plasma-assisted chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Duane E. Meyer ,
Natale J. Ianno ,
John A. Woollam ,
A. B. Swartzlander  and
A. J. Nelson
Duane E. Meyer
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511
Natale J. Ianno
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511
John A. Woollam
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, Nebraska 68588-0511
A. B. Swartzlander
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
A. J. Nelson
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
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Abstract

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4 5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Type
Articles
Information
Journal of Materials Research , Volume 3 , Issue 6 , December 1988 , pp. 1397 - 1403
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1Matsumoto, S., Sato, Y., Tsutsumi, M., and Setaka, N., J. Mater. Sci. 17, 3106 (1982).CrossRefGoogle Scholar
2Sato, Y., Matsuda, S., and Nogita, S., J. Mater. Sci. Lett. 5, 565 (1986).Google Scholar
3Badzian, A., Simonton, B., Badzian, T., Messier, R., Spear, K. E., and Roy, R., Proc. SPIE 683, 127 (1986).CrossRefGoogle Scholar
4Setaka, N., in Tenth International Conference on Chemical Vapor Deposition, edited by Cullen, G. W. (The Electrochemical Society, Pennington, NJ, 1987), p. 1156.Google Scholar
5Matsumoto, S., J. Mater. Sci. Lett. 4, 600 (1985).Google Scholar
6Kijima, K., Matsumoto, S., and Setaka, N., Proc. Int. Ion Eng. Cong. 3, 1417 (1983).Google Scholar
7Sawabe, A. and Inuzuka, T., Appl. Phys. Lett. 46, 146 (1985).CrossRefGoogle Scholar
8Matsumoto, S., Hino, M., and Kobayashi, T., Appl. Phys. Lett. 51, 737 (1987).CrossRefGoogle Scholar
9Anthony, T., in MRS 1987 Fall Meeting Final Program and Abstracts (MRS, Pittsburgh, PA, 1987), p. 379.Google Scholar
10Smith, R. A., in Semiconductors (Cambridge U.P., Cambridge, 1978), 2nd ed., pp. 495–497.Google Scholar
11Angus, J. C., Koidl, P., and Domits, S., in Plasma Deposited Thin Films, edited by Mort, J. and Jansen, F. (CRC, Boca Raton, FL, 1986), p. 89.Google Scholar
12Ishida, H., Fukuda, H., Katagiri, G., and Ishitani, A., Appl. Spectrosc. 40 (3), 322 (1986).Google Scholar
13DeVries, R. C., Ann. Rev. Mater. Sci. 17, 161 (1987).CrossRefGoogle Scholar
14Badzian, A. R., Badzian, T., Roy, R., Messier, R., and Spear, K. E., Mat. Res. Bull. 23 (3), 385 (1988).Google Scholar
15Moravec, T. J. and Orent, T. W., J. Vac. Sci. Technol. 18 (2), 226 (1981).Google Scholar
16Koma, A. and Miki, K., Appl. Phys. A 34, 35 (1984).CrossRefGoogle Scholar