Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-08T05:24:34.243Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth mechanism of YBa2cu3oy superconductors prepared by the horizontal Bridgman method

Published online by Cambridge University Press:  29 June 2016

Teruo Izumi  and
Yuh Shiohara
Teruo Izumi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, Tokyo, Japan
Yuh Shiohara
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, Tokyo, Japan
Get access

Abstract

The effect of G/R (temperature gradient, G; growth rate, R) on the crystal alignment and the crystallization mechanism of YBa2Cu3Oy (123) from the partially melting state [in which Y2BaCuO5 (211) and liquid coexist in equilibrium] grown by the horizontal Bridgman method was investigated. Highly aligned 123 crystals containing fine 211 particles were obtained at high G/R ratios. The limit of G/R for continuous growth, necessary for obtaining textured structure, was confirmed to exist between 301 and 482°Ch/cm2. A high critical current density (Jc) of 1.9 × 104 A/cm2 (77 K, 1 T) was measured for a sample grown at the high G/R condition of 482°Ch/cm2, and the 123 grains grown under a condition of G/R lower than the lower limit became coarser with decreasing GR (cooling rate). Entrapment of the 211 particles in the growing 123 crystals occurs after significant coarsening of the particles in the liquid since observed radii of the 211 particles were independent of the distance from the solid/liquid interface in the 123 crystals.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 1 , January 1992 , pp. 16 - 23
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ramesh, R., Jin, S., Nakahara, S., and Tiefel, T.H., Appl. Phys. Lett. 57, 1458 (1990).CrossRefGoogle Scholar
2.Van Dover, R. B., Gyorgy, E.M., White, A.E., Schneemeyer, L.F., Felder, R.J., and Waszczak, J.V., Appl. Phys. Lett. 56, 2681 (1990).Google Scholar
3.Civaie, L., Marwick, A.D., McElfresh, M.W., Worthington, T.K., Malozemoff, A.P., Holtzberg, F.H., Thompson, J.R., and Kirk, M.A., Phys. Rev. Lett. 65, 1164 (1990).CrossRefGoogle Scholar
4.Murakami, M., Fujimoto, H., Oyama, T., Gotoh, S., Yoshida, Y., Koshizuka, N., and Tanaka, S., Proc. ICMC‘90 Materials Aspect (in press).Google Scholar
5.Enomoto, N., Kikuchi, H., Mimura, M., Nakajima, M., Uno, N., Hara, T., Okaniwa, K., and Yamamoto, T., Proc. ISS'89, 359 (1989).Google Scholar
6.Gazit, D. and Feigelson, R.S., J. Cryst. Growth 91, 318 (1988).Google Scholar
7.Kikuchi, H., Uno, N., Mastumoto, K., and Yanaka, Y., Proc. Fall Mtg. Inst., of Metal (105th), 777 (1989).Google Scholar
8.Meng, R.L., Kinalidis, C., Sun, Y.Y., Gao, L., Tao, Y.K., Hor, P.H., and Chu, C.W., Nature 345, 326 (1990).Google Scholar
9.Bean, C.P., Phys. Rev. Lett. 8, 250 (1962).Google Scholar
10.Murakami, M., Modern Phys. Lett. B 4, 163 (1990).Google Scholar
11.Flemings, M.C., Solidification Processing (McGraw-Hill, New York, 1974).Google Scholar
12.Cima, M.J., Jiang, X.P., Chow, H.M., Haggerty, J.S., and Flemings, M.C., 3rd ISTEC Workshop.Google Scholar
13.McGinn, P.J., Chen, W., and Zhu, N., JOM (in press).Google Scholar
14.Rutter, J. W. and Chalmers, B., Can. J. Phys. 31, 15 (1953).Google Scholar
15.Verhoeven, J.D., Fundamentals of Physical Metallurgy (John Wiley & Sons, New York, 1975).Google Scholar
16.Uhlmann, D.R., Chalmers, B., and Jackson, K.A., J. Appl. Phys. 35, 1986 (1964).Google Scholar