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Growth behavior and microstructure of oxide scale formed on MoSi2 coating at 773 K

Published online by Cambridge University Press:  01 October 2004

Kyung-Hwan Lee
Affiliation:
Division of Materials and Engineering, Korea University, Sungbuk-ku, Seoul 136-701, Republic of Korea
Jin-Kook Yoon*
Affiliation:
Metal Processing Research Center, Korea Institute of Science and Technology, Cheongryang,Seoul 130-650, Republic of Korea
Gyeung-Ho Kim
Affiliation:
Nano-Materials Research Center, Korea Institute of Science and Technology, Cheongryang,Seoul 130-650, Republic of Korea
Jung-Mann Doh
Affiliation:
Metal Processing Research Center, Korea Institute of Science and Technology, Cheongryang,Seoul 130-650, Republic of Korea
Kyung-Tae Hong
Affiliation:
Metal Processing Research Center, Korea Institute of Science and Technology, Cheongryang,Seoul 130-650, Republic of Korea
Woo-Young Yoon
Affiliation:
Division of Materials and Engineering, Korea University, Sungbuk-ku, Seoul 136-701, Republic of Korea
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

Growth behavior and microstructure of oxide scale formed on MoSi2 coating by cyclic oxidation testing in air at 500 °C were investigated using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, glancing angle x-ray diffraction, and x-ray photoelectron spectroscopy. MoSi2 coating was prepared by chemical vapor deposition of Si on a Mo substrate at 1100 °C for 5 h using SiCl4–H2 precursor gas mixtures. After the incubation period of about 454 cycles, accelerated oxidation behavior was observed in MoSi2 coating and the weight gain increased linearly with increasing oxidation cycles. Microstructural analyses revealed that pest oxide scale was formed in three sequential processes. Initially, nanometer-sized crystalline Mo4O11 particles were formed with an amorphous SiO2 matrix at MoSi2 interface region. Inward diffusing oxygen reacted with Mo4O11 to form Mo9O26 nano-sized particles. At final stage of oxidation, MoO3 was formed from Mo9O26 with oxygen and growth of MoO3 took place forming massive precipitates with irregular and wavy shapes. The internal stress caused by the growth of massive MoO3 precipitates and the volatilization of MoO3 was attributed to the formation of many lateral cracks into the matrix leading to pest oxidation of MoSi2 coating.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Schlichting, J.: High temperature oxidation of disilicides in the system MoSi2–TiSi2. High Temp-High Press 10, 241 (1978).Google Scholar
2Kircher, T.A. and Courtright, E.L.: Engineering limitations of MoSi2 coatings. Mater. Sci. Eng. 155, 67 (1992).CrossRefGoogle Scholar
3Yoon, J.K., Doh, J.M., Byun, J.Y., Kim, G.H., Lee, J.K. and Hong, K.T.: Formation of MoSi2–SiC composite coatings by chemical vapor deposition of Si on the surface of Mo2C layer formed by carburizing of Mo substrate. Surf. Coat. Technol . 173, 39 (2003).CrossRefGoogle Scholar
4Yoon, J.K., Kim, G.H., Byun, J.Y., Lee, J.K. and Kim, J.S.: Formation of crack-free MoSi2/α-Si3N4 composite coating on Mo substrate by ammonia nitridation of Mo5Si3 layer followed by chemical vapor deposition of Si. Surf. Coat. Technol . 165, 81 (2003).CrossRefGoogle Scholar
5Yoon, J.K., Lee, J.K., Byun, J.Y., Kim, G.H., Paik, Y.H. and Kim, J.S.: Effect of ammonia nitridation on the microstructure of MoSi2 coatings formed by chemical vapor deposition of Si on Mo substrates. Surf. Coat. Technol . 160, 29 (2002).CrossRefGoogle Scholar
6Yoon, J.K., Kim, G.H., Byun, J.Y., Lee, J.K., Paik, Y.H. and Kim, J.S.: Formation of MoSi2–Si3N4 composite coating by reactive diffusion of Si on Mo substrate pretreated by ammonia nitridation. Scripta Mater . 47, 249 (2002).CrossRefGoogle Scholar
7Fitzer, V.E.: Molybdenum disilicide as high-temperature material. In Plansee Proc., 2nd Seminar, Reutte/Tyrol, 1955, (1956), pp. 5679.Google Scholar
8Berztiss, D.A., Cerchiara, R.R., Gulbransen, E.A., Pettit, F.S. and Maier, G.M.: Oxidation of MoSi2 and comparison with other silicide materials. Mater. Sci. Eng. A 155, 165 (1992).CrossRefGoogle Scholar
9McKamey, C.G., Tortorelli, P.F., Devan, J.H. and Carmichael, C.A.: A study of pest oxidation in polycrystalline molybdenum disilicide. J. Mater. Res. 7, 2747 (1992).Google Scholar
10Yanagihara, K., Przybylski, K. and Maruyama, T.: Pest degradation in beryllides, silicides, aluminides, and related compounds. Oxid. Met. 47, 277 (1997).CrossRefGoogle Scholar
11Westbrook, J.H. and Wood, D.L.: Pest degradation in beryllides, silicides, aluminides, and related compounds. J. Nucl. Mater. 12, 208 (1964).CrossRefGoogle Scholar
12Chou, T.C. and Nieh, T.G.: Mechanism of molybdenum disilicide pest during low temperature oxidation. J. Mater. Res. 8, 214 (1993).CrossRefGoogle Scholar
13Chou, T.C. and Nieh, T.G.: Kinetics of molybdenum disilicide pest during low-temperature oxidation. J. Mater. Res. 8, 1605 (1993).CrossRefGoogle Scholar
14Kurokawa, K., Houzaumi, H., Saeke, I. and Takahashi, H.: Low temperature oxidation of fully dense and porous MoSi2. Mater. Sci. Eng. A 261, 292 (1999).CrossRefGoogle Scholar
15Meschter, P.J.: Low-temperature oxidation of molybdenum disilicide. Metall. Trans. 23A, 1763 (1992).CrossRefGoogle Scholar
16Hansson, K., Halvarsson, M., Tang, J.E., Svensson, J.E., Sundberg, M. and Pompe, R.: On the mechanism of MoSi2 pesting in the temperature range 400-500°C. Ceram. Eng. Sci. Proc. 21, 477 (2000).Google Scholar
17Christian, F.C. and Narita, T.N.: Siliconizing of molybdenum metal in indium-silicon melts. Mater. Trans. JIM 39, 658 (1998).CrossRefGoogle Scholar
18Gage, P.R. and Bartlett, R.W.: Diffusion kinetics affecting formation of silicide coatings on molybdenum and tungsten. Trans. TMS-AIME 233, 832 (1965).Google Scholar
19Yoon, J.K., Byun, J.Y., Kim, G.H., Kim, J.S. and Choi, C.S.: Growth kinetics of three Mo-silicide layers formed by chemical vapor deposition of Si on Mo substrate. Surf. Coat. Technol . 155, 85 (2002).CrossRefGoogle Scholar
20Byun, J.Y., Yoon, J.K., Kim, G.H., Kim, J.S. and Choi, C.S.: Study on reaction and diffusion in the Mo–Si system by ZrO2 marker experiments. Scripta Mater . 46, 537 (2002).CrossRefGoogle Scholar
21Bartlett, R.W., McCamont, J.W. and Gage, P.R.: Structure and chemistry of oxide films thermally grown on molybdenum silicides. J. Am. Ceram. Soc . 48, 551 (1965).CrossRefGoogle Scholar
22Li, J., Wie, P., Chen, J. and Rongti, L.: Preparation and growth mechanism of molybdenum trioxide whisker. J. Am. Ceram. Soc. 85, 2116 (2002).Google Scholar
23Kurokawa, K., Kuchino, J., Hara, H., Takahasi, H., Shibayama, T. and Takahashi, H. In Proc. Int. Symp. on High-Temperature Corrosion and Protection 2000, edited by Narita, T., Muruyama, T., and Taniguchi, S. (Science Reviews, Hokkaido, Japan, September, 2000), pp. 523528.Google Scholar