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Formation process of interface states at grain boundaries in sputtered polycrystalline Si films

Published online by Cambridge University Press:  31 January 2011

Yoshitaka Nakano ,
Jiro Sakata  and
Yasunori Taga
Yoshitaka Nakano
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192 Japan
Jiro Sakata
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192 Japan
Yasunori Taga
Affiliation:
Toyota Central Research and Development Laboratories, Inc., Nagakute, Aichi 480-1192 Japan
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Abstract

A systematic investigation has been made on surface defect states of crystallites in the crystallization process of sputtered amorphous silicon films by isothermal annealing. Transmission electron microscopic observations indicate a pronounced vertical columnar structure in the upper part of the films, where the crystallization is delayed. Admittance spectroscopy reveals that two newly generated energy levels with the crystallization are attributed to the crystallites in the lower and upper parts of the films in view of the anisotropic crystallization. These thermally induced changes can be well explained by Si–Si shearing modes at the interfaces of crystallites through the process of crystallization.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 2 , February 1999 , pp. 371 - 376
Copyright
Copyright © Materials Research Society 1999

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References

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