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Formation of BaTiO3 and PbTiO3 thin films under mild hydrothermal conditions

Published online by Cambridge University Press:  31 January 2011

W-ping Xu
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China
Lirong Zheng
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China
Huoping Xin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China
Chenglu Lin
Affiliation:
State Key Laboratory of Functional Materials for Informatics, Chinese Academy of Sciences, Shanghai 200050, China
Masanori Okuyama
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Osaka 560, Japan
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Abstract

Well-crystallized polycrystalline thin films of cubic barium titanate (BaTiO3) have been synthesized on Ti-covered Si substrates by exposing the substrates to a Ba(OH)2 aqueous solution at 160 °C and a low pressure less than 1 MPa. It was presumed that the film formation of BaTiO3 involved a dissolution-crystallization mechanism, which provides an attractive approach to produce other titanate films and powders. Also, we have used for the first time this hydrothermal technique to deposit epitaxial (001)-textured PbTiO3 thin films on SrTiO3(100) substrates.

Type
Articles
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1.Bondurant, D. and Gnadinger, F., IEEE Spectrum, 30 (1989).CrossRefGoogle Scholar
2.Okuyama, M. and Hamakawa, Y., Ferroelectrics 63, 243 (1985).CrossRefGoogle Scholar
3.Scott, J. F. and Paz De Araoujo, C.A., Science 246, 1400 (1989).CrossRefGoogle Scholar
4.Stein, A., Keller, S. W., and Mallouk, T.E., Science 259, 1558 (1993).CrossRefGoogle Scholar
5.Rao, C. N. R., Mater. Sci. Eng. B18, 1 (1993).CrossRefGoogle Scholar
6.Yoshimura, M., Yoo, S-E., Hayashi, M., and Ishizawa, N., Jpn. J. Appl. Phys. 28, 2007 (1989).CrossRefGoogle Scholar
7.Cho, C. R., Jang, M.S., Jeong, S.Y., Lee, S.J., and Kim, S.C., Mater. Lett. 23, 203 (1995).CrossRefGoogle Scholar
8.Nogami, G., Maruyama, H., and Hongo, K., J. Electrochem. Soc. 140 (8), 2370 (1993).CrossRefGoogle Scholar
9.Pilleux, M.E. and Fuenzalida, V.M., J. Appl. Phys. 74 (7), 4664 (1993).CrossRefGoogle Scholar
10.Xu, W-ping, Zheng, L., Xin, H., Lin, C., and Okuyama, M., J. Electrochem. Soc. (in press).Google Scholar
11.Kajiyoshi, K., Ishizawa, N., and Yoshimura, M., Jpn. J. Appl. Phys. 30 (1), L120 (1991).CrossRefGoogle Scholar