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Field-effect transistors made from macroscopic single crystals of tetracene and related semiconductors on polymer dielectrics

Published online by Cambridge University Press:  03 March 2011

Howard E. Katz ,
Christian Kloc ,
Vikram Sundar ,
Jana Zaumseil ,
Alejandro L. Briseno  and
Zhenan Bao
Howard E. Katz*
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
Christian Kloc
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
Vikram Sundar
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
Jana Zaumseil
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
Alejandro L. Briseno
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
Zhenan Bao
Affiliation:
Bell Laboratories-Lucent Technologies, Murray Hill, New Jersey 07974
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm2/V were measured, correlating well with expectations based on the literature, and in the case of tetracene and alpha-6T, exceeding the thin film mobility value. The devices were prepared in the open laboratory using simpler crystal handling techniques than had been thought necessary.

Keywords

SemiconductorCrystalDielectric
Type
Articles—Organic Electronics Special Section
Information
Journal of Materials Research , Volume 19 , Issue 7 , July 2004 , pp. 1995 - 1998
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1.Kelley, T.W. and Frisbie, C.D. Gate voltage dependent resistance of a single organic semiconductor grain boundary. J. Phys. Chem.105, 4538 (2001).Google Scholar
2.Horowitz, G., Garnier, F., Yassar, A., Hajlaoui, R. and Kouki, F.: Field-effect transistor made with a sexithiophene single crystal. Adv. Mater. 8, 52 (1996).CrossRefGoogle Scholar
3.Horowitz, G., Hajlaoui, M.E. and Hajlaoui, R.: Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors. J. Appl. Phys. 87, 4456 (2000).CrossRefGoogle Scholar
4.Laudise, R.A., Kloc, C., Simpkins, P.G. and Siegrist, T.: Physical vapor growth of organic semiconductors. J. Cryst. Growth 187, 449 (1998).Google Scholar
5.Kloc, C., Simpkins, P.G., Siegrist, T. and Laudise, R.A.: Physical vapor growth of centimeter-sized crystals of alpha-hexathiophene. J. Cryst. Growth 182,416 (1997).CrossRefGoogle Scholar
6.Mushrush, M., Facchetti, A., Lefenfeld, M., Katz, H.E. and Marks, T.J.: Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements. J. Am. Chem. Soc. 125, 9414 (2003).CrossRefGoogle ScholarPubMed
7.Gundlach, D.J., Nichols, J.A., Zhou, L. and Jackson, T.N.: Thin-film transistors based on well-ordered thermally evaporated naphthacene films. Appl. Phys. Lett. 80, 2925 (2002).CrossRefGoogle Scholar
8.Meng, H., Bendikov, M., Mitchell, G., Helgeson, R., Wudl, F., Bao, Z., Siegrist, T., Kloc, C. and Chen, C.H.: Tetramethylpentacene: remarkable absence of steric effect on field-effect mobility. Adv. Mater. 15, 1090 (2003).Google Scholar
9.Klauk, H., Halik, M., Zschieschang, U., Schmid, G., Radlik, W. and Weber, W.: High-mobility polymer gate dielectric pentacene thin film transistors. J. Appl. Phys. 92, 5259 (2002).Google Scholar