Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-07T23:19:45.475Z Has data issue: false hasContentIssue false

Ferroelectric domain structure of epitaxial (Pb,Sr)TiO3 thin films

Published online by Cambridge University Press:  31 January 2011

Yong Kwan Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Kyeong Seok Lee
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
Sunggi Baik*
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790–784, Korea
*
b)Address correspondence to this author.
Get access

Abstract

Epitaxial (Pb1−xSrx)TiO3 (PST, x = 4 0.0–0.24) thin films were grown on MgO(001) single-crystal substrates by pulsed laser deposition. General x-ray diffraction techniques including θ–2θ scan and rocking curve were used to determine lattice constants, degree of c-axis orientation, and crystal quality of the tetragonal thin films. The degree of c-axis orientation in the epitaxial PST films increased as Sr concentration (x) increased, which in turn induces the systematic change in the Curie temperature as well as the transformation strain at and below the Curie temperature. An inverse relation between the c-domain abundances and the transformation strains is established.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1Pompe, W., Gong, X., Suo, Z., and Speck, J.S., J. Appl. Phys. 74, 6012 (1993).CrossRefGoogle Scholar
2Speck, J.S. and Pompe, W., J. Appl. Phys. 76, 466 (1994).Google Scholar
3de Keijer, M., Cillessen, J.F.M., Janssen, R.B.F., de Veirman, A.E.M., and de Leeuw, D.M., J. Appl. Phys. 79, 393 (1996).CrossRefGoogle Scholar
4Kwak, B.S., Erbil, A., Budai, J.D., Chisholm, M.F., Boatner, L.A., and Wilkens, B.J., Phys. Rev. Lett. 68, 3733 (1992).Google Scholar
5Kwak, B.S., Erbil, A., Budai, J.D., Chisholm, M.F., Boatner, L.A., and Wilkens, B.J., Phys. Rev. B. 49, 14865 (1994).CrossRefGoogle Scholar
6Kang, Y.M., Ku, J.K., and Baik, S., J. Appl. Phys. 78, 2601 (1995).CrossRefGoogle Scholar
7Lee, K.S., Kang, Y.M., and Baik, S., in Ferroelectric Thin Films VI, edited by Treece, R.E., Jones, R.E., Foster, C.M., Desu, S.B., and Yoo, I.K. (Mater. Res. Soc. Symp. Proc. 493, Warrendale, PA, 1998), p. 47.Google Scholar
8Rossetti, G.A. Jr., Cross, L.E., and Cline, J.P., J. Mater. Sci. 30, 24 (1995).CrossRefGoogle Scholar
9Xu, Y., Ferroelectric Materials and Their Applications (Elsevier Science Publishers, Amsterdam, The Netherlands, 1991).Google Scholar
10Meng, J., Zou, G., Ma, Y., Wang, X., and Zhao, M., J. Phys.: Condens. Matter. 6, 6549 (1994).Google Scholar
11Foster, C.M., Pompe, W., DayKin, A.C., and Speck, J.S., J. Appl. Phys. 79, 1405 (1996).CrossRefGoogle Scholar
12Lee, K.S., Kang, Y.M., and Baik, S., J. Mater. Res. 14, 132 (1999).CrossRefGoogle Scholar
13Pertsev, N.A. and Zembligotov, A.G., J. Appl. Phys. 78, 6170 (1995).CrossRefGoogle Scholar
14Royburd, A.L., Alpay, S.P., Bendersky, L.A., Nagarajan, V., and Ramesh, R., J. Appl. Phys. 89, 553 (2001).CrossRefGoogle Scholar