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Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

Published online by Cambridge University Press:  01 March 2005

Jong-Jin Choi*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Hyoun-Ee Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

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Articles
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1.Yamakawa, K., Imai, K., Ariumi, O., Arikado, T., Yoshioka, M., Owada, T. and Okumura, K.: Novel Pb(Ti,Zr)O3 (PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices. Jpn. J. Appl. Phys. Part I. 41, 2630 (2002).CrossRefGoogle Scholar
2.Polla, D.L. and Francis, L.F.: Ferroelectric thin films in micro-electromechanical system applications. MRS Bull. 21, 759 (1996).Google Scholar
3.Brooks, K.G., Reaney, I.M., Klissurska, R., Huang, Y., Bursill, L. and Setter, N.: Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates. J. Mater. Res. 9, 2540 (1994).CrossRefGoogle Scholar
4.Chen, S. and Chen, I.: Temperature-time texture transition of Pb(Zr1−xTix )O3 thin films: I. Role of Pb-rich intermediate phase. J. Am. Ceram. Soc. 77, 2332 (1994).Google Scholar
5.Ramesh, R., Sands, T. and Keramidas, V.G.: Effect of crystallographic orientation on ferroelectric properties of PbZr0.2Ti0.8O3 thin films. Appl. Phys. Lett. 63, 731 (1993).CrossRefGoogle Scholar
6.Wang, G.S., Meng, X.J., Sun, J.L., Lai, Z.Q., Yu, J., Guo, S.L., Cheng, J.G., Tang, J. and Chu, J.H.: PbZr0.5Ti0.5O3/La0.5Sr0.5CoO3 heterostructures prepared by chemical solution routes on silicon with no fatigue polarization. Appl. Phys. Lett. 79, 3476 (2001).Google Scholar
7.Maki, K., Liu, B.T., Vu, H., Nagarajan, V., Ramesh, R., Fujimori, Y., Nakamura, T. and Takasu, H.: Controlling crystallization of Pb(Zr, Ti)O3 thin films on IrO2 electrode at low temperature through interface engineering. Appl. Phys. Lett. 82, 1263 (2003).CrossRefGoogle Scholar
8.Lee, H.Y. and Wu, T.B.: Crystallization kinetics of sputter-deposited LaNiO3 thin films on Si substrate. J. Mater. Res. 13, 2291 (1998).CrossRefGoogle Scholar
9.Choi, J.J., Park, G.T., Park, C.S., Lee, J.W. and Kim, H.E.: Effect of lanthanum nitrate buffer layer on orientation and piezoelectric property of Pb(Zr,Ti)O3 thick films. J. Mater. Res. 19, 3671 (2004).Google Scholar
10.Choi, J.J., Park, C.S., Park, G.T. and Kim, H.E.: Growth of highly (100) oriented Pb(Zr,Ti)O3 thin film on silicon and glass substrates using lanthanum nitrate as a buffer layer. Appl. Phys. Lett. 85, 4621 (2004).CrossRefGoogle Scholar
11.Mekhemer, G.A.H. and Balboul, B.A.A.: Thermal genesis course and characterization of lanthanum oxide. Colloids Surf. A 181, 19 (2001).CrossRefGoogle Scholar
12.Rajeev, K.P., Shicashankar, G.V. and Raychaudhuri, A.P.: Low-temperature electronic properties of a normal conducting perovskite oxide (LaNiO3). Solid State Commun. 79, 591 (1991).Google Scholar
13.Yang, C.C., Chen, M.S., Hong, T.T., Wu, C.M., Wu, J.M. and Wu, T.B.: Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3. Appl. Phy. Lett. 66, 2643 (1995).CrossRefGoogle Scholar
14.Wu, C.M., Hong, T.J. and Wu, T.B.: Effects of (100)-textured LaNiO3 electrode on the deposition and characteristics of PbTiO3 thin films prepared by RF magnetron sputtering. J. Mater. Res. 12, 2158 (1997).CrossRefGoogle Scholar
15.Meng, X.J., Cheng, J.G., Sun, J.L., Ye, H.J., Guo, S.L. and Chu, J.H.: Growth of (100)-oriented LaNiO3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT films. J. Cryst. Growth 220, 100 (2000).Google Scholar
16.Park, G.T., Choi, J.J., Ryu, J., Fan, H. and Kim, H.E.: Measurement of piezoelectric coefficient of lead zirconate titanate thin films by strain-monitoring pneumatic loading method. Appl. Phys. Lett. 80, 4606 (2002).CrossRefGoogle Scholar
17.Du, X., Belehundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: Theoretical expectation for thin films. Jpn. J. Appl. Phys. Part I 36, 5580 (1997).Google Scholar
18.Du, X., Zheng, J., Belehundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).Google Scholar
19.Taylor, D.V. and Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and random crystallographic orientation. Appl. Phys. Lett. 76, 1615 (2000).CrossRefGoogle Scholar