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Facile synthesis of poly(methylsilsesquioxane) and MgO nanoparticle composite dielectrics

Published online by Cambridge University Press:  22 May 2013

Natalie Olivia Victoria Plank ,
Han Yue Zheng ,
Satya Agarwal ,
Dayna Kivell ,
Gideon Gouws  and
Jadranka Travas-Sejdic
Natalie Olivia Victoria Plank*
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
Han Yue Zheng
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
Satya Agarwal
Affiliation:
MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
Dayna Kivell
Affiliation:
School of Engineering and Computer Science, Victoria University of Wellington, Wellington, New Zealand
Gideon Gouws
Affiliation:
School of Engineering and Computer Science, Victoria University of Wellington, Wellington, New Zealand
Jadranka Travas-Sejdic
Affiliation:
Polymer Electronics Research Center and MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical Sciences, University of Auckland, Auckland 1142, New Zealand
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The use of MgO nanoparticle (NP) loaded poly(methylsilsesquioxane) (PMSQ) as a low temperature processable composite dielectric has been investigated. The composite dielectrics have been synthesized using facile ultrasonic mixing of trimethoxymethylsilane (MTS), butanol (n-BuOH) and deionized water at 60 °C, with MgO loadings from 0.096 up to 0.39 wt% of the initial solution. Thin films of the composite materials produced have shown an increase in dielectric constant from 2.8 for raw PMSQ up to 3.4 for the 0.39 wt% loaded PMSQ + MgO NP composites at frequencies up to 2 MHz, comparable to 3.9 for SiO2. The composite dielectric materials have shown suitability as a dielectric material for a P3HT OFET, with the performance comparable to a standard SiO2 dielectric control sample.

Keywords

dielectricdevicespolymer
Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 11 , 14 June 2013 , pp. 1490 - 1497
Copyright
Copyright © Materials Research Society 2013 

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