Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T20:26:26.292Z Has data issue: false hasContentIssue false
  • English
  • Français

Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

Published online by Cambridge University Press:  01 March 2006

Zakhary F. Krasilnik ,
Boris A. Andreev ,
Denis I. Kryzhkov ,
Ludmila V. Krasilnikova ,
Viktor P. Kuznetsov ,
Dmitry Yu. Remizov ,
Viacheslav B. Shmagin ,
Margarita V. Stepikhova ,
Artem N. Yablonskiy  and
Tom Gregorkievicz
...Show all authors
Zakhary F. Krasilnik
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Boris A. Andreev
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Denis I. Kryzhkov
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Ludmila V. Krasilnikova
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Viktor P. Kuznetsov
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Dmitry Yu. Remizov
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Viacheslav B. Shmagin
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Margarita V. Stepikhova
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Artem N. Yablonskiy*
Affiliation:
Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105,Nizhny Novgorod 603950, Russia
Tom Gregorkievicz
Affiliation:
Van der Waals–Zeeman Institute, University of Amsterdam, Valckenierstraat 65,NL-1018 XE Amsterdam, The Netherlands
Nguyen Q. Vinh
Affiliation:
Van der Waals–Zeeman Institute, University of Amsterdam, Valckenierstraat 65,NL-1018 XE Amsterdam, The Netherlands
Wolfgang Jantsch
Affiliation:
Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz,A-4040 Linz-Auhof, Austria
Hanka Przybylinska
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02 668 Warszawa, Poland
Victor Yu. Timoshenko
Affiliation:
Moscow State University, Physics Faculty, 119992 Moscow, Russia
Denis M. Zhigunov
Affiliation:
Moscow State University, Physics Faculty, 119992 Moscow, Russia
*
a) Address all correspondence to this author. e-mail: [email protected] This paper was selected as the Outstanding Meeting Paper for the 2005 MRS Spring Meeting Symposium V Proceedings, Vol. 866.
Get access

Abstract

The paper is a brief retrospective review of our contribution to the Si:Er problem in the last decade. It contains a description of the experimental facilities, results of the light-emitting media (Si:Er and Si1−xGex:Er) research, and device applications.

Keywords

infrared (IR) spectroscopymolecular beam epitaxy (MBE)optoelectronic
Type
Outstanding Meeting Papers
Information
Journal of Materials Research , Volume 21 , Issue 3 , March 2006 , pp. 574 - 583
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ennen, H., Schneider, J., Pomrenke, G., Axmann, A.: 1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon. Appl. Phys. Lett. 43, 943 (1983).CrossRefGoogle Scholar
2.Ennen, H., Pomrenke, G., Axmann, A., Haydl, W., Schneider, J.: 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. Appl. Phys. Lett. 46, 381 (1985).CrossRefGoogle Scholar
3.Priolo, F., Franzo, G., Coffa, S., Carnera, A.: Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si. Phys. Rev. B 57, 4443 (1998).CrossRefGoogle Scholar
4.Takahei, K., Taguchi, A.: Energy transfer in rare-earth-doped III-V semiconductors. Mater. Sci. Forum 83–87, 641 (1992).CrossRefGoogle Scholar
5.Kuznetsov, V.P., Rubtsova, R.A.: Special features of the sublimation molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures. Semiconductors 34, 502 (2000).CrossRefGoogle Scholar
6.Stepikhova, M.V., Andreev, B.A., Shmagin, V.B., Krasil’nik, Z.F., Kuznetsov, V.P., Shengurov, V.G., Svetlov, S.P., Jantsch, W., Palmetshofer, L., Ellmer, H.: Properties of optically active Si:Er and Si1−xGex layers grown by the sublimation MBE method. Thin Solid Films 381, 164 (2001).CrossRefGoogle Scholar
7.Andreev, B., Chalkov, V., Gusev, O., Emel’yanov, A., Krasil’nik, Z., Kuznetsov, V., Pak, P., Shabanov, V., Shengurov, V., Shmagin, V., Sobolev, N., Stepikhova, M., Svetlov, S.: Realization of photo- and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy. Nanotechnology 13, 97 (2002).CrossRefGoogle Scholar
8.Krasilnik, Z.F., Aleshkin, V. Ya., Andreev, B.A., Gusev, O.B., Jantsch, W., Krasilnikova, L.V., Kryzhkov, D.I., Kuznetsov, V.P., Shengurov, V.G., Shmagin, V.B., Sobolev, N.A., Stepikhova, M.V., Yablonsky, A.N. SMBE grown uniformly and selectively doped Si:Er structures for LEDs and lasers, in Towards the First Silicon Laser, NATO Science Series, edited by Pavesi, L., Gaponenko, S., and Dal, L. Negro, (Kluwer Acadamic Publishers, Dordrecht, The Netherlands, 2003), pp. 445–454.CrossRefGoogle Scholar
9.Shmagin, V.B., Kuznetsov, V.P., Remizov, D.Yu., Krasil’nik, Z.F., Krasil’nikova, L.V., Kryzhkov, D.I.: Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique. Mater. Sci. Eng. B 105((1–3)), 70 (2004).CrossRefGoogle Scholar
10.Jantsch, W., Lanzerstorfer, S., Palmetshofer, L., Stepikhova, M., Preier, H.: Different Er centres in Si and their use for electroluminescent devices. J. Lumin. 80, 9 (1999).CrossRefGoogle Scholar
11.Andreev, B.A., Andreev, A.Yu., Gaponova, D.M., Krasil’nik, Z.F., Kuznetsov, V.P., Novikov, A.V., Stepikhova, M.V., Uskova, E.A., Shmagin, V.B., Lanzerstorfer, S.: Optically active Er-related centers in Si:Er epitaxial layers grown by the sublimation MBE method. Izvestiya Akademii Nauk Seriya Fizicheskaya. 64, 269 (2000).Google Scholar
12.Vinh, N.Q., Przybylinńska, H., Krasil’nik, Z.F., Andreev, B.A., Gregorkiewicz, T.: Observation of Zeeman effect in photoluminescence of Er3+ ion imbedded in crystalline silicon. Physica B: Condensed Matter 308–310, 340 (2001).CrossRefGoogle Scholar
13.Vinh, N.Q., Przybylińska, H., Krasil’nik, Z.F., Gregorkiewicz, T.: Optical properties of a single type of optically active center in Si/Si:Er nanostructures. Phys. Rev. B70, 115332 (2004).CrossRefGoogle Scholar
14.Yablonskiy, A.N., Klik, M.A.J., Andreev, B.A., Kuznetsov, V.P., Krasilnik, Z.F., Gregorkiewicz, T.: Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures. Opt. Mater. 27, 890 (2005).CrossRefGoogle Scholar
15.Shmagin, V.B., Remizov, D.Yu., Obolenskii, S.V., Kryzhkov, D.I., Drozdov, M.N., Krasil’nik, Z.F.: Er3+ ion electroluminescence of p +-Si/n-Si:Er/n +-Si diode structure under breakdown conditions. Phys. Solid State 47, 125 (2005).CrossRefGoogle Scholar
16.Chynoweth, F.G., McKay, K.G.: Photon emission from avalanche breakdown in silicon. Phys. Rev. 102, 369 (1956).CrossRefGoogle Scholar
17.Remizov, D.Yu., Shmagin, V.B., Antonov, A.V., Kuznetsov, V.P., Krasil’nik, Z.F.: Effective excitation cross section and lifetime of Er3+ ions in Si:Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy. Phys. Solid State 47, 98 (2005).CrossRefGoogle Scholar
18.Stepikhova, M.V., Timoshenko, V.Yu., Shengurov, V.G., Zhigunov, D.M., Shalygina, O.A., Krasil’nikova, L.V., Chalkov, V.Yu., Svetlov, S.P., Krasil’nik, Z.F., Kashkarov, P.K.: Population inversion of erbium ion energy levels by excitation transfer from semiconductor matrix in silicon/germanium structures. JETP Letters 81, 614 (2005).CrossRefGoogle Scholar