Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-03T00:11:01.918Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Brian W. Sheldon ,
Theodore M. Besmann ,
Karren L. More  and
Thomas S. Moss
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912, and Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831
Theodore M. Besmann
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Karren L. More
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Thomas S. Moss
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Get access

Abstract

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 5 , May 1993 , pp. 1086 - 1092
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Schlichting, J.J. Powder Metall. Int. 12, 141 (1980).Google Scholar
2Schlichting, J.J. Powder Metall. Int. 12, 196 (1980).Google Scholar
3Bloem, J.J. Cryst. Growth 50, 581 (1980).CrossRefGoogle Scholar
4Bloem, J. and Claassen, W. A. P.Philips Tech. Rev. 41, 60 (1983).Google Scholar
5Krulevitch, P.Nguyen, T.D.Johnson, G.C.Howe, R.T.Wenk, H.R., and Gronsky, R. in Evolution of Thin Film and Surface Microstructure, edited by Thompson, C. V.Tsao, J. Y. and Srolovitz, D.J. (Mater. Res. Soc. Symp. Proc. 202, Pittsburgh, PA, 1991), p. 167.Google Scholar
6Fitzer, E. and Gadow, R.Am. Ceram. Soc. Bull. 65, 326 (1986).Google Scholar
7Lamicq, P. J.Bernhart, G.A.Dauchier, M. M. and Mace, J. G.Am. Ceram. Soc. Bull. 65, 336 (1986).Google Scholar
8Stinton, D. P.Caputo, A. J. and Lowden, R. A.Am. Ceram. Soc. Bull. 65, 347 (1986).Google Scholar
9Besmann, T. M.Sheldon, B. W.Lowden, R. A. and Stinton, D. P.Science 253, 1104 (1991).CrossRefGoogle Scholar
10Sheldon, B. W. and Besmann, T. M. in Chemical Vapor Deposition of Refractory Metals and Ceramics, edited by Besmann, T. M. and Gallois, B. M. (Mater. Res. Soc. Symp. Proc. 168, Pittsburgh, PA, 1990), p. 99.Google Scholar
11Sheldon, B. W. and Besmann, T. M. in Evolution of Thin Film and Surface Microstructure, edited by Thompson, C. V.Tsao, J. Y. and Srolovitz, D. J. (Mater. Res. Soc. Symp. Proc. 202, Pittsburgh, PA, 1991), p. 161.Google Scholar
12Nishino, S.Powell, J.A. and Will, H.A.Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
13Addamiano, A. and Sprague, J.A.Appl. Phys. Lett. 44, 525 (1984).CrossRefGoogle Scholar
14Liaw, P. and Davis, R. F.J. Electrochem. Soc. 132, 642 (1985).CrossRefGoogle Scholar
15Langlais, F.Prebende, C.Tarride, B. and Naislain, R.J. Phys. 50/C5, 93 (1989).Google Scholar
16Besmann, T.M.Sheldon, B.W. and Kaster, M.D.Surf. Coat. Technol. 43/44, 167 (1990).CrossRefGoogle Scholar
17Shinozaki, S. S. and Sato, H.J. Am. Ceram. Soc. 61, 425 (1978).Google Scholar
18Ogbuji, L. U.Mitchell, T. E.Heuer, A.H. and Shinozaki, S.J. Am. Ceram. Soc. 64, 100 (1981).Google Scholar
19Nutt, S.R. and Wawner, F.W.J. Mater. Sci. 20, 1953 (1985).CrossRefGoogle Scholar
20Kenty, J.L. and Hirth, J.P.Surf. Sci. 15, 403 (1969).CrossRefGoogle Scholar
21Drift, A. van der, Philips Res. Rep. 22, 267 (1967).Google Scholar
22Matson, E. A. and Polyakov, S. A.Phys. Status Solidi A41, K93 (1977).Google Scholar
23Lewis, B. and Anderson, J.C.Nucleation and Growth of Thin Films (Academic Press, London, 1978).Google Scholar