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Epitaxial growth of Co/Cu[100] and [111] superlattices via rf sputtering on sapphire (1120)-substrates

Published online by Cambridge University Press:  03 March 2011

Ch. Morawe ,
A. Abromeit ,
N. Metoki ,
P. Sonntag  and
H. Zabel
Ch. Morawe
Affiliation:
Institut für Experimentalphysik–Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum 1, Germany
A. Abromeit
Affiliation:
Institut für Experimentalphysik–Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum 1, Germany
N. Metoki
Affiliation:
Institut für Experimentalphysik–Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum 1, Germany
P. Sonntag
Affiliation:
Institut für Experimentalphysik–Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum 1, Germany
H. Zabel
Affiliation:
Institut für Experimentalphysik–Festkörperphysik, Ruhr-Universität Bochum, 44780 Bochum 1, Germany
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Abstract

Co/Cu superlattices with total thicknesses ranging from 10 nm to 60 nm and with periodicities of 1.6–8.5 nm were sputtered on single-crystalline sapphire (1120)-substrates. Sputtering with low rates at room temperature yields samples of high epitaxial and crystalline quality. By careful choice of the sputtering parameters, either the fee [100] or the fcc [111] orientation can be selected as growth direction on one and the same substrate orientation. The preference for a particular film orientation appears to be kinetically driven. In all cases, the average lattice spacings d and the appearance of satellite reflections in x-ray Bragg-scans point to coherent growth up to thicknesses of 30 nm. X-ray small angle reflectivity measurements reveal clear oscillations and satellites indicative for smooth interfaces. Scanning electron microscope (SEM) and transmission electron microscope (TEM) observations supplement the characterization of the films.

Type
Articles
Information
Journal of Materials Research , Volume 9 , Issue 3 , March 1994 , pp. 570 - 581
Copyright
Copyright © Materials Research Society 1994

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