Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Parisini, A
Ghosh, K
Singisetti, U
and
Fornari, R
2018.
Assessment of phonon scattering-related mobility in β-Ga2O3.
Semiconductor Science and Technology,
Vol. 33,
Issue. 10,
p.
105008.
Ghosh, Krishnendu
and
Singisetti, Uttam
2018.
Impact ionization in β-Ga2O3.
Journal of Applied Physics,
Vol. 124,
Issue. 8,
Zhang, Yuewei
Neal, Adam
Xia, Zhanbo
Joishi, Chandan
Johnson, Jared M.
Zheng, Yuanhua
Bajaj, Sanyam
Brenner, Mark
Dorsey, Donald
Chabak, Kelson
Jessen, Gregg
Hwang, Jinwoo
Mou, Shin
Heremans, Joseph P.
and
Rajan, Siddharth
2018.
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures.
Applied Physics Letters,
Vol. 112,
Issue. 17,
Yang, Jiancheng
Ren, F.
Tadjer, Marko
Pearton, S. J.
and
Kuramata, A.
2018.
Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit.
AIP Advances,
Vol. 8,
Issue. 5,
Yang, Jiancheng
Ren, F.
Tadjer, Marko
Pearton, S. J.
and
Kuramata, A.
2018.
2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers.
ECS Journal of Solid State Science and Technology,
Vol. 7,
Issue. 5,
p.
Q92.
Zhang, Yuewei
Joishi, Chandan
Xia, Zhanbo
Brenner, Mark
Lodha, Saurabh
and
Rajan, Siddharth
2018.
Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors.
Applied Physics Letters,
Vol. 112,
Issue. 23,
Allen, Noah
Xiao, Ming
Yan, Xiaodong
Sasaki, Kohei
Tadjer, Marko J.
Ma, Jiahui
Zhang, Ruizhe
Wang, Han
and
Zhang, Yuhao
2019.
Vertical Ga2O3Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2.
IEEE Electron Device Letters,
Vol. 40,
Issue. 9,
p.
1399.
Mazumder, Baishakhi
Sarker, Jith
Zhang, Yuewei
Johnson, Jared M.
Zhu, Menglin
Rajan, Siddharth
and
Hwang, Jinwoo
2019.
Atomic scale investigation of chemical heterogeneity in β-(AlxGa1−x)2O3 films using atom probe tomography.
Applied Physics Letters,
Vol. 115,
Issue. 13,
Park, Junsung
and
Hong, Sung-Min
2019.
Simulation Study of Enhancement Mode Multi-Gate Vertical Gallium Oxide MOSFETs.
ECS Journal of Solid State Science and Technology,
Vol. 8,
Issue. 7,
p.
Q3116.
Abdrakhmanov, V L
Konchenkov, V I
and
Zav’yalov, D V
2019.
Monte Carlo study of β-Ga2O3 conductivity.
Journal of Physics: Conference Series,
Vol. 1400,
Issue. 4,
p.
044024.
Zhang, Chaoqun
Liao, Fei
Liang, Xiao
Gong, Hengxiang
Liu, Qiang
Li, Ling
Qin, Xiaofang
Huang, Xuan
and
Huang, Chunjuan
2019.
Electronic transport properties in metal doped beta-Ga2O3: A first principles study.
Physica B: Condensed Matter,
Vol. 562,
Issue. ,
p.
124.
Alema, Fikadu
Zhang, Yuewei
Osinsky, Andrei
Valente, Nicholas
Mauze, Akhil
Itoh, Takeki
and
Speck, James S.
2019.
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3.
APL Materials,
Vol. 7,
Issue. 12,
Schubert, Mathias
Mock, Alyssa
Korlacki, Rafał
Knight, Sean
Galazka, Zbigniew
Wagner, Günther
Wheeler, Virginia
Tadjer, Marko
Goto, Ken
and
Darakchieva, Vanya
2019.
Longitudinal phonon plasmon mode coupling in
β
-Ga2O3.
Applied Physics Letters,
Vol. 114,
Issue. 10,
Kumar, Nitish
Joishi, Chandan
Xia, Zhanbo
Rajan, Sidhharth
and
Kumar, Satish
2019.
Electro-Thermal Simulation of Delta-Doped $\boldsymbol{\beta}$-Ga2O3 Field Effect Transistors.
p.
370.
Golz, Christian
Galazka, Zbigniew
Lähnemann, Jonas
Hortelano, Vanesa
Hatami, Fariba
Masselink, W. Ted
and
Bierwagen, Oliver
2019.
Electrical conductivity tensor of
β−Ga2O3
analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries.
Physical Review Materials,
Vol. 3,
Issue. 12,
Mastro, M. A.
Hite, J. K.
Eddy, C. R.
Tadjer, M. J.
Pearton, S. J.
Ren, F.
and
Kim, J.
2019.
Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices.
International Journal of High Speed Electronics and Systems,
Vol. 28,
Issue. 01n02,
p.
1940007.
Mauze, Akhil
Zhang, Yuewei
Mates, Tom
Wu, Feng
and
Speck, James S.
2019.
Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy.
Applied Physics Letters,
Vol. 115,
Issue. 5,
Vaidya, Abhishek
Sarker, Jith
Zhang, Yi
Lubecki, Lauren
Wallace, Joshua
Poplawsky, Jonathan D.
Sasaki, K.
Kuramata, A.
Goyal, Amit
Gardella, Joseph A.
Mazumder, Baishakhi
and
Singisetti, Uttam
2019.
Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate.
Journal of Applied Physics,
Vol. 126,
Issue. 9,
Zhang, Yuewei
Alema, Fikadu
Mauze, Akhil
Koksaldi, Onur S.
Miller, Ross
Osinsky, Andrei
and
Speck, James S.
2019.
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature.
APL Materials,
Vol. 7,
Issue. 2,
Ghosh, Krishnendu
and
Singisetti, Uttam
2019.
Theory of High Field Transport in β-Ga2O3.
International Journal of High Speed Electronics and Systems,
Vol. 28,
Issue. 01n02,
p.
1940008.