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Electrode-induced lattice distortions in GaAs multi-quantum-dot arrays

Published online by Cambridge University Press:  06 March 2019

Anastasios Pateras Open the ORCID record for Anastasios Pateras [Opens in a new window] ,
Jérôme Carnis Open the ORCID record for Jérôme Carnis [Opens in a new window] ,
Uditendu Mukhopadhyay ,
Marie-Ingrid Richard Open the ORCID record for Marie-Ingrid Richard [Opens in a new window] ,
Steven J. Leake ,
Tobias U. Schülli ,
Christian Reichl ,
Werner Wegscheider ,
Juan Pablo Dehollain  and
Lieven M.K. Vandersypen
...Show all authors
Anastasios Pateras*
Affiliation:
Department of Materials Science & Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
Jérôme Carnis
Affiliation:
Aix Marseille Université, CNRS, IM2NPUMR 7334, Université de Toulon, Marseille 13397, France; and ID01/ESRF, F-38043 Grenoble Cedex, France
Uditendu Mukhopadhyay
Affiliation:
QuTech and Kavli Institute of NanoScience, Delft University of Technology, Delft 2600 GA, The Netherlands
Marie-Ingrid Richard
Affiliation:
Aix Marseille Université, CNRS, IM2NPUMR 7334, Université de Toulon, Marseille 13397, France; and ID01/ESRF, F-38043 Grenoble Cedex, France
Steven J. Leake
Affiliation:
ID01/ESRF, F-38043 Grenoble Cedex, France
Tobias U. Schülli
Affiliation:
ID01/ESRF, F-38043 Grenoble Cedex, France
Christian Reichl
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Zürich CH-8093, Switzerland
Werner Wegscheider
Affiliation:
Laboratory for Solid State Physics, ETH Zürich, Zürich CH-8093, Switzerland
Juan Pablo Dehollain
Affiliation:
QuTech and Kavli Institute of NanoScience, Delft University of Technology, Delft 2600 GA, The Netherlands
Lieven M.K. Vandersypen
Affiliation:
QuTech and Kavli Institute of NanoScience, Delft University of Technology, Delft 2600 GA, The Netherlands
Paul G. Evans
Affiliation:
Department of Materials Science & Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Increasing the number of quantum bits while preserving precise control of their quantum electronic properties is a significant challenge in materials design for the development of semiconductor quantum computing devices. Semiconductor heterostructures can host multiple quantum dots that are electrostatically defined by voltages applied to an array of metallic nanoelectrodes. The structural distortion of multiple-quantum-dot devices due to elastic stress associated with the electrodes has been difficult to predict because of the large micrometer-scale overall sizes of the devices, the complex spatial arrangement of the electrodes, and the sensitive dependence of the magnitude and spatial variation of the stress on processing conditions. Synchrotron X-ray nanobeam Bragg diffraction studies of a GaAs/AlGaAs heterostructure reveal the magnitude and nanoscale variation of these distortions. Investigations of individual linear electrodes reveal lattice tilts consistent with a 28-MPa compressive residual stress in the electrodes. The angular magnitude of the tilts varies by up to 20% over distances of less than 200 nm along the length of the electrodes, consistent with heterogeneity in the metal residual stress. A similar variation of the crystal tilt is observed in multiple-quantum-dot devices, due to a combination of the variation of the stress and the complex electrode arrangement. The heterogeneity in particular can lead to significant challenges in the scaling of multiple-quantum-dot devices due to differences between the charging energies of dots and uncertainty in the potential energy landscape. Alternatively, if incorporated in design, stress presents a new degree of freedom in device fabrication.

Keywords

X-ray diffraction (XRD)nanostructuredevices
Type
Invited Paper
Information
Journal of Materials Research , Volume 34 , Issue 8 , 29 April 2019 , pp. 1291 - 1301
Copyright
Copyright © Materials Research Society 2019 

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