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Electrical transport properties of size-tuned ZnO nanorods

Published online by Cambridge University Press:  01 January 2006

Young Su Yun ,
Jae Young Park ,
Hwangyou Oh ,
Ju-Jin Kim  and
Sang Sub Kim
Young Su Yun
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
Jae Young Park
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
Hwangyou Oh
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561-756, Korea
Ju-Jin Kim
Affiliation:
Department of Physics, Chonbuk National University, Chonju 561-756, Korea
Sang Sub Kim*
Affiliation:
Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Size-tuned ZnO nanorod arrays (NRAs), aligned well vertically and laterally, were synthesized by catalyst-free, metalorganic chemical vapor deposition on GaN-buffered Al2O3 (0001) substrates by adjusting the O/Zn precursor ratio in the reactor. Their electrical transport properties were investigated using field effect transistors based on individual ZnO nanorods. We find that the carrier concentrations and mobilities in the nanorods are not very sensitive to the change of the precursor ratio. This suggests that altering the precursor ratio is a way of fabricating size-tuned ZnO NRAs with quite consistent electrical properties.

Keywords

Electrical propertiesMetalorganic depositionNanoscale
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 1 , January 2006 , pp. 132 - 136
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1.Xia, Y., Yang, P., Sun, Y., Wu, Y., Mayer, B., Gates, B., Yin, Y., Kim, F. and Yan, H.: One-dimensional nanostructures: Synthesis, characterization, and applications. Adv. Mater. 15, 353 (2003).CrossRefGoogle Scholar
2.Chen, X., Xu, J., Wang, R.M. and Yu, D.: High-quality ultra-fine GaN nanowires synthesized via chemical vapor deposition. Adv. Mater. 15, 419 (2003).CrossRefGoogle Scholar
3.Choy, J.H., Jang, E.S., Won, J.H., Chung, J.H., Jang, D.J. and Kim, Y.W.: Soft solution route to directionally grown ZnO nanorod arrays on Si wafer. Adv. Mater. 15, 1911 (2003).CrossRefGoogle Scholar
4.Huang, M.H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R. and Yang, P.: Room-temperature ultraviolet nanowire nanolasers. Science 292, 1897 (2001).CrossRefGoogle ScholarPubMed
5.Park, W.I., Jun, Y.H., Jung, S.W. and Yi, G.C.: Excitonic emissions observed in ZnO single crystal nanorods. Appl. Phys. Lett. 82, 964 (2003).CrossRefGoogle Scholar
6.Duan, X., Huang, Y., Agarwai, R. and Lieber, C.M.: Single-nanowire electrically driven lasers. Nature 421, 241 (2003).CrossRefGoogle ScholarPubMed
7.Verghese, P.M. and Clarke, D.R.: Piezoelectric contributions to the electrical behavior of ZnO varistors. J. Appl. Phys. 87, 4430 (2000).CrossRefGoogle Scholar
8.Wang, J.L.: Nanostructures of zinc oxide. Mater. Today 7, 26 (2004).CrossRefGoogle Scholar
9.Yi, G.C., Wang, C. and Park, W.I.: ZnO nanorods: Synthesis, characterization and applications. Semicond. Sci. Technol. 20, S22 (2005).CrossRefGoogle Scholar
10.Zhang, B.P., Binh, N.T., Wakatsuki, K., Segawa, Y., Kashiwaba, Y. and Haga, K.: Synthesis and optical properties of single crystal ZnO nanorods. Nanotechnology 15, S382 (2004).CrossRefGoogle Scholar
11.Conley, J.F., Stecker, L. and Ono, Y.: Directed assembly of ZnO nanowires on a Si substrate without a metal catalyst using a patterned ZnO seed layer. Nanotechnology 16, 292 (2005).CrossRefGoogle Scholar
12.Meng, X.Q., Shen, D.Z., Zhang, J.Y., Zhao, D.X., Dong, L., Lu, Y.M., Liu, Y.C. and Fan, X.W.: Photoluminescence properties of catalyst-free growth of needle-like ZnO nanowires. Nanotechnology 16, 609 (2005).CrossRefGoogle Scholar
13.Wu, J.J. and Liu, S.C.: Low-temperature growth of well-aligned ZnO nanorods by chemical vapor deposition. Adv. Mater. 14, 215 (2002).3.0.CO;2-J>CrossRefGoogle Scholar
14.Yang, J.L., An, S.J., Park, W.I., Yi, G.C. and Choi, W.: Photocatalysis using ZnO thin films and nanoneedles grown by metalorganic chemical vapor deposition. Adv. Mater. 16, 1661 (2004).CrossRefGoogle Scholar
15.Lee, W., Jeong, M.C. and Myoung, J.M.: Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation. Acta Mater. 52, 3949 (2004).CrossRefGoogle Scholar
16.Lee, D.J., Park, J.Y., Yun, Y.S., Hong, Y.S., Moon, J.H., Lee, B.T. and Kim, S.S.: Comparative studies on the growth behavior of ZnO nanorods by metalorganic chemical vapor deposition depending on the type of substrates. J. Cryst. Growth 276, 458 (2005).CrossRefGoogle Scholar
17.Park, J.Y., Lee, D.J. and Kim, S.S.: Size control of ZnO nanorod arrays grown by metalorganic chemical vapor deposition. Nanotechnology 16, 2044 (2005).CrossRefGoogle Scholar
18.Huang, Y., Duan, X., Cui, Y. and Lieber, C.M.: Gallium nitride nanowire nanodevices. Nano Lett. 2, 101 (2002).CrossRefGoogle Scholar