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Electrical properties of SnO2:Sb ultrathin films prepared by colloidal deposition process

Published online by Cambridge University Press:  13 January 2016

Tiago G. Conti ,
Adenilson J. Chiquito  and
Edson R. Leite
Tiago G. Conti
Affiliation:
LIEC, Department of Chemistry, Federal University of São Carlos, São Carlos, São Paulo 13565-905, Brazil
Adenilson J. Chiquito
Affiliation:
NanoLab, Department of Physics, Federal University of São Carlos, São Carlos, São Paulo 13565-905, Brazil
Edson R. Leite*
Affiliation:
LIEC, Department of Chemistry, Federal University of São Carlos, São Carlos, São Paulo 13565-905, Brazil
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

In the present work, we are investigating the electronic transport mechanism for antimony-doped tin oxide (ATO) ultrathin films produced by a colloidal deposition process (CDP) of nanocrystals synthesized via a solvothermal route in organic medium. The ATO ultrathin films were prepared from nanoparticles containing 9 mol% of Sb and the observed electrical resistivity at room temperature was 1.55, 1.10 × 10−1, and 1.83 × 10−3 Ω cm, respectively, for the 40, 45, and 71 nm films. X-ray diffraction, transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were carried out to investigate the films and electrical resistivity measurements taken in the four-probe mode with temperature ranging from −260 to 27 °C (13–300 K ± 0.1 K). Results show a good data fitting on Mott's two-dimensional (2D) noninteracting variable range hopping for the 45 nm thin film, which is not further observed for the ATO ultrathin films obtained from CDP.

Keywords

nanocrystalline materialselectrical propertiesnon-aqueous synthesissol–gel
Type
Articles
Information
Journal of Materials Research , Volume 31 , Issue 1: Annual Issue: Early Career Scholars in Materials Science , 14 January 2016 , pp. 148 - 153
Copyright
Copyright © Materials Research Society 2016 

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