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Effects of Zr/Ti ratio and post-annealing temperature on the electrical properties of lead zirconate titanate (PZT) thick films fabricated by aerosol deposition

Published online by Cambridge University Press:  31 January 2011

Byung-Dong Hahn ,
Dong-Soo Park ,
Jong-Jin Choi ,
Woon-Ha Yoon ,
Jungho Ryu  and
Doh-Yeon Kim
Byung-Dong Hahn
Affiliation:
Center for Future Technology, Korea Institute of Materials Science, Changwon, Gyeong-Nam 641-010, Korea; and School of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
Dong-Soo Park*
Affiliation:
Center for Future Technology, Korea Institute of Materials Science, Changwon, Gyeong-Nam 641-010, Korea
Jong-Jin Choi
Affiliation:
Center for Future Technology, Korea Institute of Materials Science, Changwon, Gyeong-Nam 641-010, Korea
Woon-Ha Yoon
Affiliation:
Center for Future Technology, Korea Institute of Materials Science, Changwon, Gyeong-Nam 641-010, Korea
Jungho Ryu
Affiliation:
Center for Future Technology, Korea Institute of Materials Science, Changwon, Gyeong-Nam 641-010, Korea
Doh-Yeon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Gwanak-gu, Seoul 151-742, Korea
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The effects of the Zr/Ti ratio on the electrical properties of lead zirconate titanate (PZT) thick films prepared by the aerosol deposition (AD) process were investigated to optimize the electrical properties of the thick film. The Zr/Ti ratio was varied among 45/55, 52/48, and 60/40, and the post-annealing temperature was varied from 500 to 900 °C. Microscopic examination of the as-deposited films revealed crack-free and dense microstructures with a thickness of 10 μm. The annealed films showed markedly improved electrical properties in comparison with the as-deposited films with increasing post-annealing temperature. With increasing Zr/Ti ratio, the remnant polarization and coercive field decreased. The dielectric constant and piezoelectric coefficient, d33, were highest for the PZT 52/48 film. This film annealed at 900 °C exhibited the best overall combination of electrical properties, with a dielectric constant, remnant polarization, and piezoelectric coefficient of 1320, 31.1 μC/cm2, and 150 pC/N, respectively.

Keywords

FilmFerroelectricPiezoelectric
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 226 - 235
Copyright
Copyright © Materials Research Society 2008

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