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Effects of thermal annealing on the dielectric properties of Pb(Zn1/3Nb2/3)O3-based ceramics

Published online by Cambridge University Press:  31 January 2011

Feng Xia  and
Xi Yao
Feng Xia
Affiliation:
Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
Xi Yao
Affiliation:
Electronic Materials Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
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Abstract

Pb(Zn1/3Nb2/3)O3-based ceramics were thermally annealed at 700–900 °C for 4 h. Both the relative dielectric constant and dissipation factor in the vicinity of transition temperature were increased when the specimens were thermally annealed at 700–900 °C, but the diffusion factor was decreased. After thermal annealing, the maximum dielectric constant Km was increased from about 11,000 to 26,000. These phenomena can be related to the domain wall motion and the elimination of internal stress.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 5 , May 1999 , pp. 1683 - 1685
Copyright
Copyright © Materials Research Society 1999

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References

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