Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-08T05:31:58.041Z Has data issue: false hasContentIssue false

Effects of the crystallographic orientation of Sn on the electromigration of Cu/Sn–Ag–Cu/Cu ball joints

Published online by Cambridge University Press:  11 February 2011

Kiju Lee*
Affiliation:
Graduate School of Engineering, Osaka University, Ibaraki, Osaka 567-0047, Japan
Keun-Soo Kim
Affiliation:
Institute of Science and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
Yutaka Tsukada
Affiliation:
Institute of Science and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
Katsuaki Suganuma
Affiliation:
Institute of Science and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
Kimihiro Yamanaka
Affiliation:
Kyocera SLC Technologies Corporation, Advanced Packaging Laboratory, Yasu, Shiga 520-2362, Japan
Soichi Kuritani
Affiliation:
Espec Corporation, Electronic Device System Sales Engineering Department, Kita Ward, Osaka 530-8550, Japan
Minoru Ueshima
Affiliation:
Senju Metal Industry Co., Ltd., Senjuhasidocho, Tokyo 270-0021, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

Electromigration behavior and fast circuit failure with respect to crystallographic orientation of Sn grains were examined. The test vehicle was Cu/Sn–3.0 wt% Ag–0.5 wt% Cu/Cu ball joints, and the applied current density was 15 kA/cm2 at 160 °C. The experimental results indicate that most of the solder bumps show different microstructural changes with respect to the crystallographic orientation of Sn grains. Fast failure of the bump occurred due to the dissolution of the Cu circuit on the cathode side caused by the fast interstitial diffusion of Cu atoms along the c-axis of the Sn grains when the c-axis was parallel to the electron flow. Slight microstructural changes were observed when the c-axis was perpendicular to the electron flow. In addition, Cu6Sn5 intermetallic compound (IMC) was formed along the direction of the c-axis of the Sn grains instead of the direction of electron flow in all solder ball joints.

Type
Articles
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ho, P.S., Wang, G., Ding, M., Zhao, J.-H., and Dai, X.: Reliability issues for flip-chip packages. Microelectron. Reliab. 44, 719 (2004).CrossRefGoogle Scholar
2.Tu, K.N.: Recent advances on electromigration in very-large-scale-integration of interconnects. J. Appl. Phys. 94, 5451 (2003).CrossRefGoogle Scholar
3.Yeh, E.C.C., Choi, W.J., and Tu, K.N.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 (2002).CrossRefGoogle Scholar
4.Tu, K.N.: Physics and materials challenges for lead-free solders. J. Appl. Phys. 93, 1135 (2003).CrossRefGoogle Scholar
5.Chan, Y.C. and Yang, D.: Failure mechanisms of solder interconnects under current stressing in advanced electronic packages. Prog. Mater. Sci. 55, 428 (2010).CrossRefGoogle Scholar
6.Dyson, B.F.: Diffusion of gold and silver in tin single crystals. J. Appl. Phys. 37, 2375 (1966).CrossRefGoogle Scholar
7.Dyson, B.F., Anthony, T.R., and Turnbull, D.: Interstitial diffusion of copper in tin. J. Appl. Phys. 38, 3408 (1967).CrossRefGoogle Scholar
8.Huang, F.H. and Huntington, H.B.: Diffusion of Sb124, Cd109, Sn113, and Zn65 in tin. Phys. Rev. B. 9, 1479 (1974).CrossRefGoogle Scholar
9.Yeh, D.C. and Huntington, H.B.: Extreme fast-diffusion system: Nickel in single-crystal tin. Phys. Rev. Lett. 53, 1469 (1984).CrossRefGoogle Scholar
10.Telang, A.U., Bieler, T.R., Lucas, J.P., Subramanian, K.N., Lehman, L.P., Xing, Y., and Cotts, E.J.: Grain-boundary character and grain growth in bulk tin and bulk lead-free solder alloys. J. Electron. Mater. 33(12), 1412 (2004).CrossRefGoogle Scholar
11.Lu, M., Shih, D.-Y., Lauro, P., Goldsmith, C., and Henderson, D.W.: Effect of Sn grain orientation on electromigration degradation mechanism in high Sn-based Pb-free solders. Appl. Phys. Lett. 92, 211909 (2008).CrossRefGoogle Scholar
12.Yamanaka, K., Tsukada, Y., and Suganuma, K.: Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system. Microelectron. Reliab. 47, 1280 (2007).CrossRefGoogle Scholar
13.JEDEC STANDARD: Guideline for Characterizing Solder Bump Electromigration under Constant Current and Temperature Stress, JEP154 (2008).Google Scholar
14.Chang, Y.W., Liang, S.W., and Chen, C.: A study of void formation due to electromigration in flip-chip solder joints using Kelvin bump probes. Appl. Phys. Lett. 89, 032103 (2006).CrossRefGoogle Scholar
15.Tu, K.N. and Thompson, R.D.: Kinetics of interfacial reaction in bimetallic Cu-Sn thin film. Acta Metall. 30, 947 (1982).CrossRefGoogle Scholar
16.Nah, J.W., Paik, K.W., Suh, J.O., and Tu, K.N.: Mechanism of electromigration-induced failure in the 97Pb–3Sn and 37Pb–63Sn composite solder joints. J. Appl. Phys. 94, 7560 (2003).CrossRefGoogle Scholar
17.Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P., and Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. J. Appl. Phys. 80, 580 (2002).Google Scholar
18.Huang, J.R., Tsai, C.M., Lin, Y.W., and Kao, C.R.: Pronounced electromigration of Cu in molten Sn-based solders. J. Mater. Res. 23, 250 (2008).CrossRefGoogle Scholar
19.Liu, C.Y., Ke, L., Chuang, Y.C., and Wang, S.J.: Study of electromigration-induced Cu consumption in the flip-chip Sn/Cu solder bumps. J. Appl. Phys. 100, 083702 (2006).CrossRefGoogle Scholar
20.Huntington, B.: Electromigration in metal. In Diffusion in Solids: Recent Developments, edited by Nowick, A.S. and Burton, J.J., (Academic, New York, 1979), pp. 303352.Google Scholar
21.Shangguan, D.: Lead-Free Solder Interconnection (AMS International, Materials Park, OH, 2005), p. 42.Google Scholar