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Effects of PbO insert layer on the microstructure and energy storage performance of (042)-preferred PLZT antiferroelectric thick films

Published online by Cambridge University Press:  09 May 2012

Ying Wang ,
Xihong Hao  and
Jinbao Xu
Ying Wang
Affiliation:
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
Xihong Hao*
Affiliation:
School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China
Jinbao Xu
Affiliation:
Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Two-micrometer-thick Pb0.97La0.02(Zr0.98Ti0.02)O3 (PLZT) antiferroelectric films, with the addition of different PbO insert layer, were successfully fabricated on LaNiO3/Si substrates through a sol–gel method, and their microstructure and the energy storage performance were investigated in detail. X-ray diffraction curves and scanning electron microscopy images indicated that all the PLZT films showed a strong (042)-preferred orientation and had a uniform surface microstructure. The electrical measurements illustrated that the capacitive density and saturation polarization values of the thick films were improved by the PbO insert layer. As a result, PLZT thick films with 0.4‐M/L PbO‐insert layer possessed an enhanced energy storage density and energy storage efficiency, which were 25.2 J/cm3 and 52.3% measured at 984 kV/cm, respectively. Moreover, after 106 switching, the Jreco values of the corresponding films were only declined from 17.5 to 16.1 J/cm3, indicating good fatigue endurance.

Keywords

AntiferroelectricPLZTThick filmsDielectric propertiesEnergy storage
Type
Articles
Information
Journal of Materials Research , Volume 27 , Issue 13 , 14 July 2012 , pp. 1770 - 1775
Copyright
Copyright © Materials Research Society 2012

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