Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-24T13:06:27.708Z Has data issue: false hasContentIssue false
  • English
  • Français

The effects of (Ba,Sr,Ca)CO3 or LaB6 addition on the x-ray photoelectron spectroscopy spectra and electrical properties of the MgO thin films in alternating current plasma display panels

Published online by Cambridge University Press:  31 January 2011

Sung Hwan Moon ,
Tae Wook Heo ,
Sun Young Park ,
Jae Hyuk Kim ,
Young Chul Choi ,
Sung Il Ahn ,
Joohwi Lee  and
Hyeong Joon Kim
Sung Hwan Moon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Samsung SDI Corporate R&D Center, Gongse-dong, Kiheung-gu, Yongin-City, Gyenggi Province 446-577, Korea
Tae Wook Heo
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Sun Young Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jae Hyuk Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Samsung SDI Corporate R&D Center, Gongse-dong, Kiheung-gu, Yongin-City, Gyenggi Province 446-577, Korea
Young Chul Choi
Affiliation:
Samsung SDI Corporate R&D Center, Gongse-dong, Kiheung-gu, Yongin-City, Gyenggi Province 446-577, Korea
Sung Il Ahn
Affiliation:
Department of Advanced Materials Engineering, Korea Polytechnic University, Shihung-si, Gyenggi Province 429-793, Korea
Joohwi Lee
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Hyeong Joon Kim*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea; and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
Get access

Abstract

MgO thin films are widely used in plasma display panels (PDPs) to protect the dielectric layer, which is composed of PbO2, B2O3, and SiO2 compound, against ion bombardment during discharge. To improve the electrical properties of the MgO thin films, (Ba,Sr,Ca)CO3 or LaB6, which has a lower work function than that of MgO, added to the MgO films. The effects of (Ba,Sr,Ca)CO3 or LaB6 addition on the electrical properties, microstructure, and electronic band structure were investigated. In the case where (Ba,Sr,Ca)CO3 was added, the firing voltage, which is the voltage when the panel is ignited the first time during increasing input voltage, was about 18.4 V lower than that of the conventional MgO films. In the case where LaB6 was added, the firing voltage was also reduced by about 24 V. The luminance and luminous efficiency were also increased. Of particular interest was the valence band spectra changed after adding (Ba,Sr,Ca)CO3 or LaB6. The valence band edge, which is the top of the valence band, was shifted to lower binding states and the width of the valence band was increased. Moreover, the band gap was slightly reduced. Considering the emission mechanism of MgO films in plasma display panels, these results mean that the secondary electrons can be ejected more easily and the ejected electrons have more energy. Therefore, the addition of (Ba,Sr,Ca)CO3 or LaB6 might improve the electrical properties.

Keywords

X-ray photoelectron spectroscopy (XPS)DisplayThin film
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 2 , February 2008 , pp. 444 - 451
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Weber, L.F.: Challenge of measuring annual energy consumption of TV sets.IDW’05Digest,1429 2005Google Scholar
2Uchidoi, M.: Fourth-generation PDPs: High image quality and low power consumption.SID’04 Digest,202 2004CrossRefGoogle Scholar
3Urade, T., Iemori, T., Osawa, M., Nakayama, N.Morita, I.: A protecting layer for the dielectric in ac plasma panels. IEEE Trans. Electron Devices 23(3), 313 1976CrossRefGoogle Scholar
4Park, S.Y., Lee, M.J., Moon, S.H., Kim, S.G., Kim, J.K.Kim, H.J.: Relationship between the microstructure and the discharge characteristics of MgO protecting layer in alternating current plasma display panels. J. Vac. Sci. Technol., A 23(4), 1162 2005CrossRefGoogle Scholar
5Lee, M.J., Park, S.Y., Moon, S.H., Kim, S.G., Kim, J.K.Kim, H.J.: Effect of stress and density on the electrical and physical properties of MgO protecting layer for alternating current-plasma display panels. J. Vac. Sci. Technol., A 23(4), 1192 2005CrossRefGoogle Scholar
6Vink, T.J., Balkenende, A.R., Verbeek, R.G.F.A., van Hal, H.A.M.de Zwart, S.T.: Materials with a high secondary-electron yield for use in plasma displays. Appl. Phys. Lett. 80(12), 2216 2002CrossRefGoogle Scholar
7Hirakawa, T.Uchiike, H.: Defects in vacuum evaporated MgO thin films observed by cathodoluminescence analysis.IDW’04 Digest,883 2004Google Scholar
8Motoyama, Y., Hirano, Y., Ishii, K., Murakami, Y.Sato, F.: Influence of defect states on the secondary electron emission yield γ from MgO surface. J. Appl. Phys. 95(12), 8419 2004CrossRefGoogle Scholar
9Uchiike, H., Miura, K., Nakamura, N., Shinoda, T.Fukushima, Y.: Secondary electron characteristics of dielectric materials in ac-operated plasma display panels. IEEE Trans. Electron Devices 23, 1211 1976CrossRefGoogle Scholar
10Choi, E.H., Lim, J.Y., Kim, Y.G., Ko, J.J., Kim, D.I., Lee, C.W.Cho, G.S.: Secondary electron emission coefficient of a MgO single crystal. J. Appl. Phys. 86(11), 6525 1999CrossRefGoogle Scholar
11Boughariou, A., Blaise, G., Braga, D.Kallel, A.: Charge dynamics of MgO single crystals subjected to KeV electron irradiation. J. Appl. Phys. 95(8), 4117 2004CrossRefGoogle Scholar
12Cheng, Y.H., Kupfer, H., Richter, F., Giegengack, H.Hoyer, W.: Structure and secondary electron-emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering. J. Appl. Phys. 93(3), 1422 2003CrossRefGoogle Scholar
13Hagstrum, H.D.: Theory of Auger neutralization of ions at the surface of a diamond-type semiconductor. Phys. Rev. 122(1), 83 1961CrossRefGoogle Scholar
14Aboelfotoh, M.O.Lorenzen, J.A.: Influence of secondary-electron emission from MgO surfaces on voltage-breakdown curves in Penning mixtures for insulated-electrode discharges. J. Appl. Phys. 48(11), 4754 1977CrossRefGoogle Scholar
15Motoyama, Y., Matsuzaki, H.Murakami, H.: A study of the secondary electron yield γ of insulator cathodes for plasma display panels. IEEE Trans. Electron Devices 48(8), 1568 2001CrossRefGoogle Scholar
16Miyazaki, S.: Characterization of high-k gate dielectric/silicon interfaces. Appl. Surf. Sci. 190, 66 2002CrossRefGoogle Scholar