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Effect of substrate temperature on the crystallographic structure and first-order magnetic phase transition of FeRh thin films

Published online by Cambridge University Press:  03 April 2013

Wei Lu ,
Ping Huang ,
Kaikai Li  and
Biao Yan
Wei Lu*
Affiliation:
Department of Metallic Materials, School of Materials Science and Engineering, Shanghai Key Laboratory of D&A for Metal-Functional Materials, Tongji University, Shanghai 200092, China
Ping Huang
Affiliation:
Department of Metallic Materials, School of Materials Science and Engineering, Shanghai Key Laboratory of D&A for Metal-Functional Materials, Tongji University, Shanghai 200092, China
Kaikai Li
Affiliation:
Department of Metallic Materials, School of Materials Science and Engineering, Shanghai Key Laboratory of D&A for Metal-Functional Materials, Tongji University, Shanghai 200092, China
Biao Yan
Affiliation:
Department of Metallic Materials, School of Materials Science and Engineering, Shanghai Key Laboratory of D&A for Metal-Functional Materials, Tongji University, Shanghai 200092, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

In this article, the effects of substrate temperature on the crystallographic structure and first-order magnetic phase transition in iron-rhodium (FeRh) thin films are investigated. It was found that for the as-deposited FeRh thin films, 350–400 °C is the optimal range of substrate temperature for obtaining B2 ordered FeRh thin films. After postannealing, it was shown that 400 °C is the optimized substrate deposition temperature for obtaining the best chemical/atomic ordering in postannealed FeRh thin films. Magnetization studies indicate that the as-deposited FeRh thin film with substrate temperature of 350 °C does not show a first-order antiferromagnetic (AFM)- to-ferromagnetic (FM) phase transition behavior during heating process and it gives a typical FM behavior whereas the as-deposited FeRh thin film deposited at 400 °C shows a broad first-order AFM-to-FM phase transition during heating and cooling processes. Both the postannealed FeRh thin films deposited at 350 and 400 °C give a clear first-order AFM-to-FM phase transition with a residual magnetization of about 50–100 emu/cc. The residual magnetization may possibly be caused by the disordered bcc (α) FM phase, B2 ordered (α′) FM phase or a near-surface/interfacial ferromagnetism in the ordered FeRh thin films.

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Articles
Information
Journal of Materials Research , Volume 28 , Issue 8 , 28 April 2013 , pp. 1042 - 1046
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

Manekar, M. and Roy, S.B.: Reproducible room temperature giant magnetocaloric effect in Fe–Rh. J. Phys. D: Appl. Phys. 41, 192004 (2008).Google Scholar
Nikitin, S.A., Myalikguliev, G., Annaorazov, M.P., Tyurinb, A.L., Myndyevb, R.W., and Akopyan, S.A.: Giant elastocaloric effect in FeRh alloy. Phys. Lett. A 171, 234 (1992). http://www.sciencedirect.com/science/article/pii/037596019290432L.Google Scholar
Ibarra, M.R. and Algarabel, P.A.: Giant volume magnetostriction in the FeRh alloy. Phys. Rev. B 50, 4196–4199 (1994).Google Scholar
Sharma, M., Aarbogh, H.M., Thiele, J-U., Maat, S., Fullerton, E.E., and Leighton, C.: Magnetotransport properties of epitaxial MgO(001)/FeRh films across the antiferromagnet to ferromagnet transition. J. Appl. Phys. 109, 083913 (2011).Google Scholar
Maat, S., Thiele, J-U., and Eric, E.F.: Temperature and field hysteresis of the antiferromagnetic-to-ferromagnetic phase transition in epitaxial FeRh film. Phys. Rev. B 72, 214432 (2005).Google Scholar
Fullerton, E., Maat, S., and Thiele, J.U.: “Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh,” San Jose, CA. U.S. Patent 20 050 281 081, Dec 22, 2005.Google Scholar
Cher, K.M., Zhou, T.J., and Chen, J.S.: Compositional effects on the structure and phase transition of epitaxial FeRh thin films. IEEE Trans. Magn. 47, 4033 (2011).Google Scholar
Kande, D., Pisana, S., Weller, D., Laughlin, D.E., and Zhu, J.G.: Enhanced B2 ordering of FeRh thin films using B2 NiAl underlayers. IEEE Trans. Magn. 47, 3296 (2011).Google Scholar
Cao, J., Nam, N.T., Inoue, S., Ko, H.Y.Y., Phuoc, N.N., and Suzuki, T.: Magnetization behaviors for FeRh single crystal thin film. J. Appl. Phys. 103, 07F501 (2008).Google Scholar
Kande, D., Laughlin, D.E., and Zhu, J.G.: Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films. J. Appl. Phys. 107, 09E318 (2010).CrossRefGoogle Scholar
Lu, W., Yan, B., and Suzuki, T.: Magnetic phase transition and magneto-optical properties in epitaxial FeRh0.95Pt0.05 (0 0 1) single-crystal thin film. Scr. Mater. 61, 851 (2009).Google Scholar
Wei, L., JunWei, F., and Biao, Y.: Microstructure and magnetic properties of FeRh thin films with Pt doping. Sci. China, Ser. G 54, 1223 (2011).Google Scholar
Yang, E., Laughlin, D.E., and Zhu, J-G.: Correction of order parameter calculations for FePt perpendicular thin films. IEEE Trans. Magn. 48, 7 (2012).Google Scholar
van Driel, J., Coehoorn, R., Strijkers, G.J., Brück, E., and de Boer, F.R.: Compositional dependence of the giant magnetoresistance in FexRh1−x thin films. J. Appl. Phys. 85, 1026 (1999).Google Scholar
Ohtani, Y. and Hatakeyama, I.: Features of broad magnetic transition in FeRh thin film. J. Magn. Magn. Mater. 131, 339 (1994).Google Scholar
Fan, R., Kinane, C.J., Charlton, T.R., Dorner, R., Ali, M., de Vries, M.A., Brydson, R.M.D., Marrows, C.H., Hickey, B.J., Arena, D.A., Tanner, B.K., Nisbet, G., and Langridge, S.: Ferromagnetism at the interfaces of antiferromagnetic FeRh epilayers. Phys. Rev. B 82, 184418 (2010).Google Scholar