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Effect of spark plasma sintering temperature on thermoelectric properties of Bi2S3 polycrystal

Published online by Cambridge University Press:  17 October 2011

Zhen-Hua Ge ,
Bo-Ping Zhang ,
Zhao-Xin Yu  and
Jing-Feng Li
Zhen-Hua Ge
Affiliation:
Beijing Key Lab of New Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Bo-Ping Zhang*
Affiliation:
Beijing Key Lab of New Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Zhao-Xin Yu
Affiliation:
Beijing Key Lab of New Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Jing-Feng Li
Affiliation:
State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Bismuth sulfide (Bi2S3) polycrystalline bulks with a high relative density (>90%) were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS). The microstructural and thermoelectric (TE) properties were investigated with a special emphasis on the influence of SPS temperature. The components (Bi/S ratio), grain size, and relative density of Bi2S3 bulk are sensitive to the SPS temperature, which all affect the electrical transport properties of samples. Elevating SPS temperature results in grain growth, densification, and spontaneous texturing, which benefit to enhance TE properties, whereas overheating leads to severe volatilization of both S and Bi and formation of porous microstructure. The highest figure of merit value reaches 0.22 at 573 K for the Bi2S3 sample obtained by applying SPS at 673 K for 5 min, which is the maximum value reported so far in bulk Bi2S3 system. The enhanced TE property of cheap and environmental friendly Bi2S3 material indicates a great promise in TE devices.

Keywords

TextureThermoelectricSintering
Type
Articles
Information
Journal of Materials Research , Volume 26 , Issue 21 , 14 November 2011 , pp. 2711 - 2718
Copyright
Copyright © Materials Research Society 2011

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