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Effect of SiC, TaB2 and TaSi2 additives on the isothermal oxidation resistance of fully dense zirconium diboride

Published online by Cambridge University Press:  31 January 2011

Fei Peng ,
Yolande Berta  and
Robert F. Speyer
Robert F. Speyer*
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The oxidation resistances of ZrB2 containing SiC, TaB2, and TaSi2 additions of various concentrations were studied using isothermal thermogravimetry at 1200, 1400, and 1500 °C, and specimens were further characterized using x-ray diffraction and electron microscopy. Increasing SiC concentration resulted in thinner glassy surface layers as well as thinner ZrO2-rich underlayers deficient in silica. This silica deficiency was argued to occur by a wicking process of interior-formed borosilicate liquid to the initially-formed borosilicate liquid at the surface. Small (3.32 mol%) concentrations of TaB2 additions were more effective at increasing oxidation resistance than equal additions of TaSi2. The benefit of these additives was related to the formation of a zirconium-tantalum boride solid solution during sintering, which during oxidation, fragmented into fine particles of ZrO2 and TaC. These particles resisted wicking of their liquid/glassy borosilicate encapsulation, which increased overall oxidation resistance. With increasing TaB2 or TaSi2 concentration, oxidation resistance degraded, most egregiously with TaB2 additions. In these cases, zirconia dendrites appeared to grow through the glassy layers, providing conduits for oxygen migration.

Keywords

OxidationPassivationZr
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 5 , May 2009 , pp. 1855 - 1867
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1.Murata, Y. and Whitney, E.B.: Densification and wear resistance of ceramic systems: III. Tantalum mononitride-zirconium diboride. Am. Ceram. Soc. Bull. 48(7), 698 (1969).Google Scholar
2.Murata, Y.: Densification and wear resistance of HfN-ZrB2 compositions. Am. Ceram. Soc. Bull. 52 (3), 255 (1973).Google Scholar
3.Zhang, X., Hu, P., Meng, S., Han, J., and Wang, B.: Microstructure and mechanical properties of ZrB2-based ceramics. Key Eng. Mater. 312, 287 (2006).CrossRefGoogle Scholar
4.Tripp, W.C.: Effect of an SiC addition on the oxidation of ZrB2. Am. Ceram. Soc. Bull. 52(8), 1606 (1973).Google Scholar
5.Opeka, M.M., Talmy, I.G., Wuchina, E.J., Zaykosi, J.A., and Causey, S.J.: Mechanical, thermal, and oxidation properties of refractory hafnium and zirconium compounds. J. Eur. Ceram. Soc. 19, 2405 (1999).CrossRefGoogle Scholar
6.Rezaie, A.R., Fahrenholtz, W.G., and Hilmas, G.E.: Oxidation of zirconium diboride-silicon carbide at 1500 °C in a low partial pressure of oxygen. J. Am. Ceram. Soc. 89(10), 3240 (2006).CrossRefGoogle Scholar
7.Varshneya, A.K.: Fundamentals of Inorganic Glasses (Academic Press, New York, 1994).Google Scholar
8.Opila, E.J. and Halbig, M.C.: Oxidation of ZrB2-SiC. Elec. Chem. Soc. Proc. 12, 221 (2002).Google Scholar
9.Rezaie, A., Fahrenholtz, W.G., and Hilmas, G.E.: Evolution of structure during the oxidation of zirconium diboride-silicon carbide in air up to 1500 °C. J. Eur. Ceram. Soc. 27, 2495 (2007).CrossRefGoogle Scholar
10.Opeka, M., Talmy, I., and Zayk:oski, J.: Oxidation-based materials selection for 2000 °C+ hypersonic aerosurfaces: Theoretical considerations and historical experience. J. Mater. Sci. 39, 5887 (2004).CrossRefGoogle Scholar
11.Han, J., Hu, P., Zhang, X., and Meng, S.: Oxidation behavior of zirconium diboride-silicon carbide at 1800 °C. Scr. Mater. 57, 825 (2007).CrossRefGoogle Scholar
12.Karlsdottir, S.N., Halloran, J.W., and Grundy, A.N.: Zirconia transport by liquid convection during oxidation of zirconium diboride-silicon carbide. J. Am. Ceram. Soc. 91(1), 272 (2008).CrossRefGoogle Scholar
13.Talmy, I.G., Zaykoski, J.A., Opeka, M.M., and Dallek, S.: Oxidation of ZrB2 ceramics modified with SiC and group IV–VI transition metal diborides. Elec. Chem. Soc. Proc. 12, 144 (2001).Google Scholar
14.Vogel, W.: Glass Chemistry, 2nd ed. (Springer-Verlag, New York, 1994).CrossRefGoogle Scholar
15.Opila, E., Levine, S., and Lorincz, J.: Oxidation of ZrB2- and HfB2-based ultra-high temperature ceramics: Effect of Ta additions. J. Mater. Sci. 39, 5969 (2004).CrossRefGoogle Scholar
16.Talmy, I.G., Zaykoski, J.A., Opeka, M.M., and Smith, A.H.: Properties of ceramics in the system ZrB2-Ta5Si3. J. Mater. Res. 21(10), 2593 (2006).CrossRefGoogle Scholar
17.Levine, S. R., and Opila, E. J.: Tantalum addition to zirconium diboride for improved oxidation resistance. NASA/TM–2003–212483.Google Scholar
18.Zhang, S.C., Hilmas, G.E., and Fahrenholtz, W.G.: Improved oxidation resistance of zirconium diboride by tungsten carbide additions. J. Am. Ceram. Soc. 91, 3530 (2008).CrossRefGoogle Scholar
19.Zhang, X-H., Hu, P., Han, J-C., Xu, L. and Meng, S-H.: The addition of lanthanum hexaboride to zirconium diboride for improved oxidation resistance. Scr. Mater. 57(1) 36–39 (2007).CrossRefGoogle Scholar
20.Peng, F. and Speyer, R.F.: Oxidation resistance of fully dense ZrB2 with SiC, TaB2, and TaSi2 additives. J. Am. Ceram. Soc. 91(5), 1489 (2008).CrossRefGoogle Scholar
21.Lee, W.E. and Rainforth, W.M.: Ceramic Microstructures, Property Control by Processing (Chapman and Hall, London, 1994).Google Scholar