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Effect of ordered structure and domain boundary on low-loss Ba[Mg1/3(Nbx/4Ta(4−x)/4)2/3]O3 microwave dielectric ceramics

Published online by Cambridge University Press:  03 March 2011

Chen-Fu Lin ,
Horng-Hwa Lu ,
Tien-I Chang  and
Jow-Lay Huang
Chen-Fu Lin
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Horng-Hwa Lu
Affiliation:
Department of Mechanical Engineering, National Chin-Yi Institute of Technology, Taichung 411, Taiwan, Republic of China
Tien-I Chang
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
Jow-Lay Huang*
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University, Tainan 701, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The microstructure of Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics (x = 1, 2, 3, and 4) was investigated. Ordered structure and domain boundary were observed by high-resolution transmission electron microscopy. The disordered structure of 0.41 nm lattice modulation and the 1:2 ordering structure of 0.71 nm lattice modulation in the [111] direction are both formed in Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics. Except for the incoherent interface between disordered and 1:2 ordering domain, the coherent interface between two 1:2 ordering domains can also be observed in the Ba[Mg1/3(NbxTa(4−x)/4)2/3]O3 ceramics. In the Ba[Mg1/3(Nb1/4Ta3/4)2/3]O3 ceramic, the formation of an extra ordering structure (lattice modulation of 1.24 nm in the [111] direction) on the antiphase domain boundary with proper Nb substitution contributes to lower dielectric loss due to the stabilization of the domain boundary.

Keywords

Dielectric propertyMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 10 , October 2006 , pp. 2564 - 2571
Copyright
Copyright © Materials Research Society 2006

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