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Effect of LPHT annealing on interface characteristics between HPHT Ib diamond substrates and homoepitaxial CVD diamond layers

Published online by Cambridge University Press:  17 January 2020

Xiaohua Zhu ,
Jinlong Liu ,
Siwu Shao ,
Yun Zhao ,
Juping Tu ,
Liangxian Chen ,
Junjun Wei  and
Chengming Li
Xiaohua Zhu
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Jinlong Liu*
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Siwu Shao
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Yun Zhao
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Juping Tu
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Liangxian Chen
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Junjun Wei
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
Chengming Li
Affiliation:
Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress evolution and related impurity transformation near the interface were characterized by Raman spectroscopy, photoluminescence, and micro-infrared spectroscopy before and after annealing. It is found that the stress is the smallest in a 100 μm wide zone near the interface, accompanying with the similar change in substitutional nitrogen (Ns) concentration. After annealing at 1050 °C, 1250 °C, and 1450 °C, the local compressive stress is released gradually with temperature change. It is decreased by 1.03 GPa in maximum after annealing at 1450 °C. The concentration of nitrogen–vacancy (NV) complexes in the chemical vapor deposition (CVD) layer is dramatically reduced at 1450 °C. The value of ${{I_{{\rm{NV}}^ \hbox- } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^ - } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ decreases much more than ${{I_{{\rm{NV}}^0 } } \mathord{\left/ {\vphantom {{I_{{\rm{NV}}^0 } } {I_{{\rm{diamond}}} }}} \right. \kern-\nulldelimiterspace} {I_{{\rm{diamond}}} }}$ in the CVD layer, which is due to the lower stability of NV− compared with NV0 at high temperature.

Keywords

diamondstress/strain relationshipannealing
Type
Article
Information
Journal of Materials Research , Volume 35 , Issue 5: Focus Issue: The Science and Technology of Vapor Phase Processing and Modification of Surfaces , 16 March 2020 , pp. 527 - 536
Copyright
Copyright © Materials Research Society 2020

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Footnotes

b)

This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/editor-manuscripts/.

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