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Effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by vapor–liquid–solid growth

Published online by Cambridge University Press:  03 March 2011

Kok-Keong Lew ,
Ling Pan ,
Elizabeth C. Dickey  and
Joan M. Redwing
Kok-Keong Lew
Affiliation:
Department of Materials Science and Engineering and The Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Ling Pan
Affiliation:
Department of Materials Science and Engineering and The Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Elizabeth C. Dickey
Affiliation:
Department of Materials Science and Engineering and The Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Joan M. Redwing*
Affiliation:
Department of Materials Science and Engineering and The Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
*
c) Address all correspondence to this author. e-mail: [email protected]
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Abstract

The effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by the vapor–liquid–solid method using gaseous precursors (SiH4 and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425 °C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1−xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1−xGex nanowires.

Keywords

GeNanostructureSi
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2876 - 2881
Copyright
Copyright © Materials Research Society 2006

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