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Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

Published online by Cambridge University Press:  03 March 2011

Kenji Takahashi ,
Hiroshi Funakubo ,
Shiro Hino ,
Makoto Nakayama ,
Naoki Ohashi ,
Takanori Kiguchi  and
Eisuke Tokumitsu
Kenji Takahashi*
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan
Shiro Hino
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
Makoto Nakayama
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
Naoki Ohashi
Affiliation:
National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
Eisuke Tokumitsu
Affiliation:
Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan; and Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Hafnium oxide films were deposited on silicon substrates at deposition temperatures ranging from 190 to 500 °C by metalorganic chemical vapor deposition using an amide precursor, Hf[N(C2H5)2]4, and O2 as source materials. The effect of deposition temperature on the deposition characteristics and electrical properties of the resultant films were investigated. Reaction-limited deposition of hafnium oxide films occurred at deposition temperatures under 380 °C. Concentration of residues, such as carbon, nitrogen, and hydrogen, monotonously decreased with increasing deposition temperature, with nitrogen being the most thermally susceptible. However, surface roughness reached a minimum value at 400 °C. Amorphous films were obtained for deposition temperatures up to 450 °C, but obviously became crystallized at 500 °C. Accumulation capacitance increased with increasing deposition temperature but saturated above 400 °C. Moreover, postdeposition annealing at 800 °C caused no obvious degradation in the electrical properties of the film deposited at 400 °C.

Keywords

Chemical vapor deposition (CVD)DielectricThin film
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 584 - 589
Copyright
Copyright © Materials Research Society 2004

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