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Effect of defects on graphitization of SiC

Published online by Cambridge University Press:  28 December 2012

Göknur Cambaz Büke ,
Gleb Yushin ,
Vadym Mochalin  and
Yury Gogotsi
Göknur Cambaz Büke*
Affiliation:
Department of Materials Science and Engineering, Cankaya University, Ankara, Turkey
Gleb Yushin
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332
Vadym Mochalin
Affiliation:
Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104
Yury Gogotsi
Affiliation:
Department of Materials Science and Engineering, A.J. Drexel Nanotechnology Institute, Philadelphia, Pennsylvania 19104
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Epitaxial graphene and carbon nanotubes (CNTs) grown on SiC have shown big potential in electronics. The motivation to produce faster and smaller electronic devices using less power opened the way to a study of how to produce controlled epitaxial graphene and CNTs on SiC. Since defects are among the important tools to control the properties of materials, the effects of defects on the carbon formation on SiC have been analyzed. In this study, the effects of defects on the carbon formation on SiC have been analyzed. We produced carbon films on the surface of four different SiC materials (polycrystalline sintered SiC disks, single crystalline SiC wafers, SiC whiskers, and nanowhiskers) by chlorination and vacuum annealing with the goal to understand the effects of surface defects on the carbon structure and the SiC decomposition rate. We have shown that grain boundaries, dislocations, scratches, surface steps, and external surfaces may greatly enhance the reaction rate and affect the final structure of carbon derived from SiC.

Type
Articles
Information
Journal of Materials Research , Volume 28 , Issue 7: Focus Issue: De Novo Carbon Nanomaterials: Opportunities and Challenges in a Flat World , 14 April 2013 , pp. 952 - 957
Copyright
Copyright © Materials Research Society 2012

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References

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