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The effect of abrasive hardness on the chemical-assisted polishing of (0001) plane sapphire

Published online by Cambridge University Press:  03 March 2011

Honglin Zhu ,
Dale E. Niesz ,
Victor A. Greenhut  and
Robert Sabia
Honglin Zhu*
Affiliation:
Department of Ceramic and Materials Engineering, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854
Dale E. Niesz
Affiliation:
Department of Ceramic and Materials Engineering, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854
Victor A. Greenhut
Affiliation:
Department of Ceramic and Materials Engineering, Rutgers, the State University of New Jersey, Piscataway, New Jersey 08854
Robert Sabia
Affiliation:
Corning Incorporated, Science and Technology Division, Corning, New York 14831
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

A series of abrasives with various hardness values including monocrystalline and polycrystalline diamond, α- and γ-alumina, zirconia, ceria, and silica were used to examine the concept of chemical-assisted polishing for finishing the (0001), c-plane (basal plane), of sapphire. Diaspore, a monohydrate of alumina, was also evaluated. Atomic force microscopy suggested that the hydrated layer of the c-plane surface was about 1 nm thick. Polishing experiments were designed to determine whether the chemically modified surface hydration layer forms on the basal plane in water. The results indicate that harder abrasives do not necessarily cause faster material removal and better surface finish for similar abrasive particle size. Abrasives with hardness equal to or less than sapphire such as α-Al2O3 and γ-Al2O3 achieved the best surface finish and greatest efficiency of material removal. It is proposed that the (0001) c-plane sapphire surface was modified by water to form a thin hydration layer with structure and hardness close to diaspore. This reaction layer can be removed by an abrasive that is softer than sapphire but harder than the reaction layer. α-Al2O3 was particularly effective. This result is attributed to adhesion between identical reaction layers on the basal planes of the alumina abrasive and the sapphire. This demonstrates that high removal rates and good surface finish can be achieved without costly diamond polishing.

Keywords

MachiningScanning probe microscopy (SPM)Surface reaction
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 2 , February 2005 , pp. 504 - 520
Copyright
Copyright © Materials Research Society 2005

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