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Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films

Published online by Cambridge University Press:  31 January 2011

Seo-Yong Cho ,
Chang-Hun Kim ,
Dong-Wan Kim ,
Kug Sun Hong  and
Jong-Hee Kim
Seo-Yong Cho
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Chang-Hun Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Dong-Wan Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Kug Sun Hong*
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Jong-Hee Kim
Affiliation:
Materials Research Lab., Samsung Electro-Mechanics Co., Ltd.
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Ln(Mg1/2Ti1/2)O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg1/2Ti1/2)O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (=1/ tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg1/2Ti1/2)O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg1/2Ti1/2)O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1 : 1 mixture at 950 °C. Considering dielectric and physical properties, La(Mg1/2Ti1/2)O3 and Sm(Mg1/2Ti1/2)O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 6 , June 1999 , pp. 2484 - 2487
Copyright
Copyright © Materials Research Society 1999

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