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Cubic silicon nitride embedded in amorphous silicon dioxide

Published online by Cambridge University Press:  31 January 2011

Ming Zhang ,
Hongliang He ,
F. F. Xu ,
T. Sekine ,
T. Kobayashi  and
Y. Bando
Ming Zhang*
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106–7204
Hongliang He
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
F. F. Xu
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
T. Sekine
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
T. Kobayashi
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
Y. Bando
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki, Tsukuba, Ibaraki, 305–0044, Japan
*
a)Address all correspondence to this author.
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Abstract

A cubic silicon nitride embedded in amorphous SiO2 compound has been characterized by means of high-resolution analytical electron microscopy. The specimen was prepared from β–Si3N4 powders at a high pressure and temperature by shock wave compression. The typical high-resolution electron microscopy image from one small crystallite together with its diffractodiagram pattern indicated that the Si3N4 crystallites had a cubic symmetry. The electron energy loss spectrum from the small crystallite is very different from those of outside amorphous SiO2 phase and raw β–Si3N4 particles, and there are more N elements that were detected in this small crystallite than those in standard Si3N4.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 8 , August 2001 , pp. 2179 - 2181
Copyright
Copyright © Materials Research Society 2001

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References

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