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Cubic phase stabilization and improved dielectric properties of atomic-layer-deposited EryHf1-yOx thin films

Published online by Cambridge University Press:  31 January 2011

K.B. Jinesh ,
Y. Lamy ,
E. Tois ,
R. Forti ,
M. Kaiser ,
F. Bakker ,
H.J. Wondergem ,
W.F.A. Besling  and
F. Roozeboom
K.B. Jinesh*
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and Holst Centre (IMEC), 5605 KN Eindhoven, The Netherlands
Y. Lamy
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and CEA-LETI, Grenoble 38054, France
E. Tois
Affiliation:
ASM Microchemistry Ltd., Väinö Auerin Katu 12 A, FIN-00560 Helsinki, Finland
R. Forti
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands
H.J. Wondergem
Affiliation:
Philips–MiPlaza Material Analysis, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
W.F.A. Besling
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands
F. Roozeboom
Affiliation:
NXP Semiconductor Research, High-Tech Campus 4, 5656 AE, Eindhoven, The Netherlands; and Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

The electrical and physical properties of atomic-layer-deposited EryHf1-yOx thin films have been investigated with different stoichiometries of erbium oxide (Er2O3) and hafnium oxide (HfO2). The as-deposited and annealed EryHf1-yOx films exhibit much higher dielectric constants than the reported k-values of the corresponding binary oxides. The highest k-value of 37.6 ± 1 is achieved with 13 at.% of erbium in the film. The enhancement in dielectric constant is due to the formation of the cubic HfO2 phase stabilized by erbium, as revealed by x-ray diffraction experiments. The annealed mixed oxide films exhibit remarkably low oxide charges, low interface states, low leakage, and good breakdown electric fields.

Keywords

DielectricAtomic layer depositionElectrical properties
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 8: Materials for Electrical Energy Storage , August 2010 , pp. 1629 - 1635
Copyright
Copyright © Materials Research Society 2010

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References

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