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Crystallization kinetics of amorphous Ga–Sb–Te films: Part II. Isothermal studies by a time-resolved optical transmission method

Published online by Cambridge University Press:  01 October 2004

Chain-Ming Lee ,
Yeong-Iuan Lin  and
Tsung-Shune Chin
Chain-Ming Lee
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China
Yeong-Iuan Lin
Affiliation:
Department of Chemical Engineering, National United University, Miaoli 36000, Taiwan, Republic of China
Tsung-Shune Chin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan, Republic of China; and Department of Chemical Engineering, National United University, Miaoli 36000, Taiwan, Republic of China
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Abstract

Isothermal crystallization kinetics of amorphous Ga–Sb–Te films was studied by means of a time-resolved optical transmission method. Thin films with compositions along the pseudo-binary tie-lines Sb7Te3–GaSb and Sb2Te3–GaSb in the ternary phase diagram were prepared by the co-sputtering method. Crystallization of GaSbTe films reveals a two-stage process: an initial surface nucleation and coarsening (Stage 1) followed by the one-dimensional grain growth (Stage 2). The kinetic exponent (n) value in Stage 1 shows strong dependence on film compositions, while that of Stage 2 is less dependent. The activation energy in Stage 1 increases with increasing GaSb content and reaches the maximum values at compositions close to GaSb, but a decreasing trend was observed in Stage 2. Kinetics parameters between isothermal crystallization of thin films and non-isothermal crystallization of powder samples analyzed by differential scanning colorimetry [J. Mater. Res. 19, 2929 (2004)] are compared. The kinetic parameters in Stage 1 show much correspondence with those of non-isothermal cases in comparable kinetic exponents but with lower activation energies. The discrepancies between nonisothermal and isothermal kinetics are attributed to the sample morphology and the constraint effects.

Keywords

OpticalKineticsCalorimetry
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 10 , October 2004 , pp. 2938 - 2946
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Yusu, K., Ashida, S., Nakamura, N., Oomachi, N., Morishita, N., Ogawa, A. and Ichihara, K.: Advanced phase change media for blue laser recording of 18 GB capacity for 0.65 numerical aperture and 30 GB capacity for 0.85 numerical aperture. Jpn. J. Appl. Phys. 42, 858 (2003).CrossRefGoogle Scholar
2Lee, C-M., Yen, W-S., Liu, R-H. and Chin, T-S.: Performance of Ge-Sb–Bi-Te-B recording media for phase-change optical disks. Jpn. J. Appl. Phys. 40, 5321 (2001).CrossRefGoogle Scholar
3Lee, C.M., Chin, T.S. and Huang, E.Y.: Optical properties and structure of tellurium-germanium-bismuth-antimony compounds with fast phase-change capability. J. Appl. Phys. 89, 3290 (2001).CrossRefGoogle Scholar
4Narahara, T., Kobayashi, S., Hattori, M., Shimpuku, Y., van den Enden, G.J., Kahlman, J.A.H.M., van Dijk, M. and van Woudenberg, R.: Optical disc system for digital video recording. Jpn. J. Appl. Phys. 39, 912 (2000).CrossRefGoogle Scholar
5Tieke, B., Dekker, M., Pfeffer, N., van Woudenberg, R., Zhou, G-F. and Ubbens, I.P.D.: High data-rate phase-change media for the digital video recording system. Jpn. J. Appl. Phys. 39, 762 (2000).CrossRefGoogle Scholar
6Lee, C-M. and Chin, T-S.: New Optical Media Based on Ge4Sb1-xBixTe5, in Proc. 12th Int. Conf. Ternary and Multinary Compounds. Jpn. J. Appl. Phys. Suppl. 39, 513 (2000).CrossRefGoogle Scholar
7Lee, C-M., Chin, T-S., Huang, Y-Y., Tung, I-C., Jeng, T-R., Chiang, D-Y. and Huang, D-R.: Optical properties of Ge40Sb10Te50Bx (x = 0-2) films. Jpn. J. Appl. Phys. 38, 6369 (1999).CrossRefGoogle Scholar
8Avrami, M.: Kinetics of phase change. I, General theory. J. Chem. Phys. 7, 1103 (1939).CrossRefGoogle Scholar
9Avrami, M.: Kinetics of phase change. II, Transformation-time relations for random distribution of nuclei. J. Chem. Phys. 8, 212 (1940).CrossRefGoogle Scholar
10Avrami, M.: Kinetics of phase change. III, Granulation, phase change, and microstructure. J. Chem. Phys. 9, 177 (1941).CrossRefGoogle Scholar
11Johnson, W.A. and Mehl, R.F.: Reaction kinetics in processes of nucleation and growth. Trans. Am. Inst. Min. Metall. Pet. Eng. 135, 416 (1939).Google Scholar
12Libera, M. and Chen, M.: Time-resolved reflection and transmission studies of amorphous Ge-Te thin-film crystallization. J. Appl. Phys. 73, 2272 (1993).CrossRefGoogle Scholar
13Weidenhof, V., Friedrich, I., Ziegler, S. and Wuttig, M.: Laser induced crystallization of amorphous Ge2Sb2Te5 Films. J. Appl. Phys. 89, 3168 (2001).CrossRefGoogle Scholar
14Jeong, T.H., Kim, M.R. and Seo, H.: Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films. J. Appl. Phys. 86, 774 (1999).CrossRefGoogle Scholar
15Seo, H., Jeong, T-H., Park, J-W., Yeon, C., Kim, S-J. and Kim, S-Y.: Investigation of crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films. Jpn. J. Appl. Phys. 39, 745 (2000).Google Scholar
16An, S-H., Kim, D. and Kim, S.Y.: New crystallization kinetics of phase change of Ge2Sb2Te5 at moderately elevated temperature. Jpn. J. Appl. Phys. 41, 7400 (2002).CrossRefGoogle Scholar
17Ohshima, N.: Crystallization of germanium-antimony-tellurium amorphous thin film sandwiched between various dielectric protective films. J. Appl. Phys. 79, 8357 (1996).CrossRefGoogle Scholar