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Coupling effect of thermomigration and cross-interaction on evolution of intermetallic compounds in Cu/Sn/Ni ultrafine interconnects undergoing TLP bonding

Published online by Cambridge University Press:  15 May 2017

Yi Zhong ,
Ning Zhao ,
Wei Dong ,
Haitao Ma ,
Mingliang Huang ,
Luqiao Yin  and
Chingping Wong
Yi Zhong
Affiliation:
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Ning Zhao*
Affiliation:
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Wei Dong
Affiliation:
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Haitao Ma*
Affiliation:
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Mingliang Huang
Affiliation:
School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Luqiao Yin
Affiliation:
Key Laboratory of Advanced Display and System Applications (Shanghai University), Ministry of Education, Shanghai 200072, China
Chingping Wong
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta 30332, Georgia, USA
*
a) Address all correspondence to these authors. e-mail: [email protected]
b) e-mail: [email protected]
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Abstract

By reflowing Cu/Sn/Ni ultrafine interconnects under a temperature gradient, a new transient liquid phase (TLP) bonding process was proposed for three-dimensional packaging applications. The evolution of the dominant (Cu,Ni)6Sn5 intermetallic compounds depends strongly on the temperature gradient. The essential cause of such dependence is attributed to the different amounts of Cu and Ni atomic fluxes being introduced into the liquid solder. Under the coupling effect of thermomigration and Cu–Ni cross-interaction, the total atomic flux of Cu and Ni is promoted. As a result, the growth of dense (Cu,Ni)6Sn5 is significantly accelerated and the formation of Cu3Sn is eliminated. The new TLP bonding process consumes only a limited amount of the Ni substrate, but much more from the Cu substrate. The mechanism for the new TLP bonding process is discussed and experimentally verified in this study.

Keywords

bondingelectronic materialpackaging
Type
Articles
Information
Journal of Materials Research , Volume 32 , Issue 16 , 28 August 2017 , pp. 3128 - 3136
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Copyright
Copyright © Materials Research Society 2017 

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Footnotes

Contributing Editor: C. Robert Kao

References

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