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Constraints on removal of Si3N4 film with conformation-controlled poly(acrylic acid) in shallow-trench isolation chemical–mechanical planarization (STI CMP)

Published online by Cambridge University Press:  31 January 2011

Ye-Hwan Kim ,
Seung-Mi Lee ,
Kee-June Lee ,
Ungyu Paik  and
Jea-Gun Park
Ye-Hwan Kim
Affiliation:
Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Seung-Mi Lee
Affiliation:
Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Kee-June Lee
Affiliation:
Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Ungyu Paik*
Affiliation:
Division of Advanced Materials Science Engineering, Hanyang University, Seoul 133-791, Republic of Korea
Jea-Gun Park*
Affiliation:
Nano-Silicon-On-Insulator (SOI) Process Laboratory, Hanyang University, Seoul 133-791, Republic of Korea
*
a)Address all correspondence to these authors. e-mail: [email protected]
b)Address all correspondence to these authors. e-mail: [email protected]
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Abstract

The effect of changes in poly(acrylic acid) (PAA) conformation on removal of Si3N4 film was investigated. PAA was used as a passivation agent by adsorption on an Si3N4 film in shallow-trench isolation chemical–mechanical planarization (STI CMP). Adsorption behavior of PAA on the Si3N4 film and the conformation transition were determined by adsorption isotherms and force measurements using atomic force microscopy (AFM) as a function of ionic strength. AFM results revealed that, as ionic strength increases, the repulsive force between the negatively charged carboxylate groups along the backbone of PAA is reduced due to counterion screening and to the changes of PAA conformation from a stretched to a coiled configuration. At high ionic strength, the coiled conformation of PAA formed a dense passivation layer on the Si3N4 film, which led to suppression of the removal rate of Si3N4 film from 72 to 61 Å/min in the STI CMP process.

Keywords

CMPPassivationAdsorption
Type
Articles
Information
Journal of Materials Research , Volume 23 , Issue 1 , January 2008 , pp. 49 - 54
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

1Wolf, S.: Deep-Submicron Process Technology Lattice Press Sunset Beach, CA 2002 433Google Scholar
2Rajiv-Singh, K.Bajaj, R.: Advances in chemical–mechanical planarization. MRS Bull. 27, 743 2002CrossRefGoogle Scholar
3Feng, X., Sayle, D.C., Wang, Z.L., Paras, M.S., Santora, B., Sutorik, A.C., Sayle, T.X.T., Yang, Y., Ding, Y., Wang, X.Her, Y-S.: Converting ceria polyhedral nanoparticles into single-crystal nanospheres. Science 312, 1504 2006CrossRefGoogle ScholarPubMed
4Phillip-Carter, W.Johns, T.P.: Interfacial reactivity between ceria and silicon dioxide and silicon nitride surfaces. Electrochem. Solid-State Lett. 8, G218 2005CrossRefGoogle Scholar
5Kim, S-K., Paik, U., Oh, S-G., Park, Y-K., Katoh, T.Park, J-G.: Effects of the physical characteristics of cerium oxide on plasma-enhanced tetraethylorthosilicate removal rate of chemical mechanical polishing for shallow trench isolation. Jpn. J. Appl. Phys. 42, 1227 2003CrossRefGoogle Scholar
6Kang, H-G., Katoh, T., Kim, S-J., Paik, U., Park, H-S.Park, J-G.: Effects of grain size and abrasive size of polycrystalline nano-particle ceria slurry on shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 43, L365 2004CrossRefGoogle Scholar
7Park, J-G., Katoh, T., Lee, W-M., Jeon, H.Paik, U.: Surfactant effect on oxide-to-nitride removal selectivity of nano-abrasive ceria slurry for chemical mechanical polishing. Jpn. J. Appl. Phys. 42, 5420 2003CrossRefGoogle Scholar
8Katoh, T., Kang, H-G., Paik, U.Park, J-G.: Effects of abrasive morphology and surfactant concentration on polishing rate of ceria slurry. Jpn. J. Appl. Phys. 42, 1150 2003CrossRefGoogle Scholar
9Kim, J.P., Yeo, J.G., Paik, U., Jung, Y.G., Park, J.G.Hackley, V.A.: Modification of electrokinetic behavior of CeO2 abrasive particles in chemical mechanical polishing for shallow trench isolation. J. Kor. Phys. Soc. 39, S197 2001Google Scholar
10Nojo, H., Kodera, M.Nakata, R.: Slurry engineering for self-stopping, dishing free SiO2-CMP. IEDM Tech. Digest 96, 349 1996Google Scholar
11America, W.G.Babu, S.V.: Slurry additive effect on the suppression of silicon nitride removal during CMP. Electrochem. Solid-State Lett. 7, G327 2004CrossRefGoogle Scholar
12Cho, C-W., Kim, S-K., Paik, U., Park, J-G.Sigmund, W.M.: Atomic force microscopy study of the role of molecular weight of poly(acrylic acid) in chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 21, 473 2006CrossRefGoogle Scholar
13Kang, H-G., Katoh, T., Park, H-S., Paik, U.Park, J-G.: Effects of abrasive size and surfactant concentration on the non-Prestonian behavior of ceria slurry in shallow trench isolation chemical mechanical polishing. Jpn. J. Appl. Phys. 44, L136 2005CrossRefGoogle Scholar
14Kanicky, J.R.Shah, D.O.: Effect of degree, type, and position of unsaturation on the pK a of long-chain fatty acids. J. Colloid Interface Sci. 256, 201 2002CrossRefGoogle ScholarPubMed
15Ishiduki, K.Esumi, K.: The effect of pH on adsorption of poly(acrylic acid) and poly(vinylpyrrolidone) on alumina from their binary mixtures. Langmuir 13, 1587 1997CrossRefGoogle Scholar
16Kirby, G.H., Harris, D.J., Li, Q.Lewis, J.A.: Poly(acrylic acid)-poly(ethylene oxide) comb polymer effects on BaTiO3 nanoparticle suspension stability. J. Am. Ceram. Soc. 82, 181 2004CrossRefGoogle Scholar
17Lewis, J.A.: Colloidal processing of ceramics. J. Am. Ceram. Soc. 83, 2341 2000CrossRefGoogle Scholar
18Hackley, V.A.: Colloidal processing of silicon nitride with poly(acrylic acid), I: Adsorption and electrostatic interactions. J. Am. Ceram. Soc. 80, 2315 1997CrossRefGoogle Scholar
19Böhmer, M.R., Evers, O.A.Scheutjens, J.M.H.M.: Weak polyelectrolytes between two surfaces: adsorption and stabilization. Macromolecules 23, 2288 1990CrossRefGoogle Scholar
20Wang, C., Tam, K.C.Jenkins, R.D.: Dissolution behavior of HASE polymers in the presence of salt. J. Phys. Chem. B 106, 1195 2002CrossRefGoogle Scholar
21Vermöhlen, K., Lewandowski, H., Narres, H-D.Schwuger, M.J.: Adsorption of polyelectrolytes onto oxides—The influence of ionic strength, molar mass, and Ca2+ ions. Colloids Surf. A 163, 45 2000CrossRefGoogle Scholar
22Wang, J.Somasundaran, P.: Reversible conformational behavior of poly(acrylic acid) LB film with changes in pH, ionic strength and time. Colloids Surf. A 273, 63 2006CrossRefGoogle Scholar
23Vedula, R.R.Spencer, H.G.: Adsorption of poly(acrylic acid) on titania (anatase) and zirconia colloids. Colloids Surf. 58, 99 1991CrossRefGoogle Scholar
24Benecky, M.J., Wine, R.W., Kolvenbach, C.G.Mosesson, M.W.: Ionic-strength- and pH-dependent conformational states of human plasma fibronectin. Biochemistry 30, 4298 1991CrossRefGoogle ScholarPubMed
25van Steeg, H.G.M. de, Stuart, C.M.A., De Keizer, A.Bijsterbosch, B.H.: Polyelectrolyte adsorption: A subtle balance of forces. Langmuir 8, 2538 1992CrossRefGoogle Scholar
26Colic, M., Franks, G.V., Fisher, M.L.Lange, F.F.: Effect of counterion size on short range repulsive forces at high ionic strengths. Langmuir 13, 3129 1997CrossRefGoogle Scholar
27Basim, G.B.Moudgil, B.M.: Effect of soft agglomerates on CMP slurry performance. J. Colloid Interface Sci. 256, 137 2002CrossRefGoogle Scholar
28Basim, G.B., Adler, J.J., Mahajan, U., Singh, R.K.Moudgil, B.M.: Effect of particle size of chemical mechanical polishing slurries for enhanced polishing with minimal defects. J. Electrochem. Soc. 147, 3523 2000CrossRefGoogle Scholar
29Kim, S.K., Yoon, P.W., Paik, U., Katoh, T.Park, J.G.: Influence of physical characteristics of ceria particles on polishing rate of chemical mechanical planarization for shallow trench isolation. Jpn. J. Appl. Phys. 43, 7427 2004CrossRefGoogle Scholar