Hostname: page-component-6dbcb7884d-q4sxc Total loading time: 0 Render date: 2025-02-13T22:14:25.634Z Has data issue: false hasContentIssue false
  • English
  • Français

Composition of SiCN crystals consisting of a predominantly carbon-nitride network

Published online by Cambridge University Press:  31 January 2011

D. M. Bhusari ,
C. K. Chen ,
K. H. Chen ,
T. J. Chuang ,
L. C. Chen  and
M. C. Lin
D. M. Bhusari
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
C. K. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
T. J. Chuang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
M. C. Lin
Affiliation:
Department of Chemistry, Emory University, Atlanta, Georgia 30322
Get access

Abstract

We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C–N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at.% in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 322 - 325
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Liu, A. Y. and Cohen, M. L., Science 245, 841 (1989).Google Scholar
2.Ortega, J. and Sankey, O. F., Phys. Rev. B 51, 2624 (1995).CrossRefGoogle Scholar
3.Liu, A. Y. and Wentzcovitch, R. M., Phys. Rev. B 50, 10 362 (1994).Google Scholar
4.Guo, Y. and Goddard, W. A. III, Chem. Phys. Lett. 237, 72 (1995).Google Scholar
5.Zhang, Z. J., Fan, S., Huang, J., and Lieber, C. M., Appl. Phys. Lett. (in press).Google Scholar
6.Fujimoto, F. and Ogata, K., Jpn. J. Appl. Phys. 32, L420 (1993).Google Scholar
7.Li, D., Chung, Y. W., Wong, M. S., and Sproul, W. D., J. Appl. Phys. 74, 219 (1993).CrossRefGoogle Scholar
8.Ren, Z. M., Du, Y. C., Ying, Z. F., Qiu, Y. X., Xiong, X. X., Wu, J. D., and Li, F. M., Appl. Phys. Lett. 65, 1361 (1994).CrossRefGoogle Scholar
9.Niu, C., Lu, Y. Z., and Lieber, C. M., Science 261, 334 (1993).Google Scholar
10.Kumar, S. and Tansley, T. L., Solid State Commun. 88, 803 (1993).CrossRefGoogle Scholar
11.Marton, D., Boyd, K. J., Al-Bayati, A. H., Todorov, S. S., and Rabalais, J. W., Phys. Rev. Lett. 73, 118 (1994).Google Scholar
12.Yu, K. M., Cohen, M. L., Haller, E. E., Hansen, W. L., Liu, A. Y., and Wu, I. C., Phys. Rev. B 49, 5034 (1994).Google Scholar
13.Riviere, J. P., Texier, D., Delafond, J., Jaouen, M., Mathe, E. L., and Chaumond, J., Mater. Lett. 22, 115 (1995).Google Scholar
14.Cuomo, J. J., Leary, P. A., Yu, D., Reuter, W., and Frish, M., J. Vac. Sci. Technol. 16, 299 (1976).Google Scholar
15.Diani, M., Monsour, A., Kubler, L., Bischoff, J. L., and Bolmont, D., Diamond and Related Materials 3, 264 (1994).CrossRefGoogle Scholar
16.Chen, L. C., Yang, C. Y., Bhusari, D. M., Chen, K. H., Lin, M. C., Lin, J. C., and Chuang, T. J., Diamond and Related Materials 5, 514 (1996).Google Scholar
17.Chen, L. C., Bhusari, D. M., Yang, C. Y., Chen, K. H., Chuang, T. J., and Lin, M. C., unpublished.Google Scholar
18.Ren, Z. M., Du, Y. C., Qiu, Y. X., Wu, J. D., Ying, Z. F., Xiong, X. X., and Li, F. M., Phys. Rev. B 51, 5274 (1995).Google Scholar
19.Rossi, F., Andre, B., van Veen, A., Mijnarends, P. E., Schut, H., Labohm, F., Dunlop, H., Delplancke, M. P., and Hubbard, K., J. Mater. Res. 9, 2440 (1994).Google Scholar
20.Sjostrom, H., Stafstrom, S., Boman, M., and Sundgren, J-E., Phys. Rev. Lett. 75, 1336 (1995).CrossRefGoogle Scholar