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Composition of SiCN crystals consisting of a predominantly carbon-nitride network

Published online by Cambridge University Press:  31 January 2011

D. M. Bhusari ,
C. K. Chen ,
K. H. Chen ,
T. J. Chuang ,
L. C. Chen  and
M. C. Lin
D. M. Bhusari
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
C. K. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
T. J. Chuang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
M. C. Lin
Affiliation:
Department of Chemistry, Emory University, Atlanta, Georgia 30322
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Abstract

We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C–N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at.% in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.

Type
Articles
Information
Journal of Materials Research , Volume 12 , Issue 2 , February 1997 , pp. 322 - 325
Copyright
Copyright © Materials Research Society 1997

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