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Composition dependence of morphology, structure, and thermoelectric properties of FeSi2 films prepared by sputtering deposition

Published online by Cambridge University Press:  31 January 2011

Tatsuo Tsunoda ,
Masakazu Mukaida ,
Akio Watanabe  and
Yoji Imai
Tatsuo Tsunoda
Affiliation:
Department of Inorganic Materials, National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305, Japan
Masakazu Mukaida
Affiliation:
Department of Inorganic Materials, National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305, Japan
Akio Watanabe
Affiliation:
Department of Inorganic Materials, National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305, Japan
Yoji Imai
Affiliation:
Department of Inorganic Materials, National Institute of Materials and Chemical Research, Higashi 1–1, Tsukuba, Ibaraki 305, Japan
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Abstract

Direct β–FeSi2 film preparation from gaseous phase was examined using a radio-frequency (rf) sputtering deposition apparatus equipped with a composite target of iron and silicon. Films composed of only β–FeSi2 phase were formed at substrate temperatures above 573 K when the chemical composition of the film was very close to stoichiometric FeSi2. The β–FeSi2 films thus formed showed rather large positive Seebeck coefficient. When the chemical composition of the films were deviated to the Fe-rich side, ∈–FeSi phase was formed along with β–FeSi2. On the other hand, α–FeSi2 phase, which is stable above 1210 K in the equilibrium phase diagram, was formed at the substrate temperature as low as 723 K when the chemical composition was deviated to the Si-rich side. The formation of α–FeSi2 phase induced drastic changes in the morphology and thermoelectric properties of the films. The α–FeSi2 phase formed in the films was easily transformed to β–FeSi2 phase by a thermal treatment.

Type
Articles
Information
Journal of Materials Research , Volume 11 , Issue 8 , August 1996 , pp. 2062 - 2070
Copyright
Copyright © Materials Research Society 1996

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