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Composition analysis of thin AlxGa1−xAs layers with TEM and SIMS

Published online by Cambridge University Press:  31 January 2011

A. F. de Jong  and
K. T. F. Janssen
A. F. de Jong
Affiliation:
Philips Research Laboratories WY2, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
K. T. F. Janssen
Affiliation:
Philips Research Laboratories WY2, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
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Abstract

In this paper two methods for measuring aluminum compositions in very thin (1.5–15 nm), individual AlxGa1–xAs layers are investigated. The transmission electron microscopy (TEM) thickness-fringe method uses the bright-field extinction fringes from a small, cleaved 90° wedge imaged in a [100] orientation. By comparing calculated and experimental extinction fringes, compositions are determined with a sensitivity in x of 0.03, in layers with a thickness of 3.5 nm. With secondary ion mass spectrometry (SIMS), compositions in AlxGa1–xAs layers with a thickness of 15 nm are measured with an accuracy in x between 0.02 and 0.05. Thicker layers (1 μm) with a composition known from x-ray diffraction measurements are used as a reference for both methods. Subsequently, TEM results are compared with SIMS and the reference measurements. The overall agreement is good, but for 0.25 < x < 0.65, the values of x found by TEM are systematically 0.05 too low. Using the SIMS and reference measurements as a calibration, compositions can be determined by TEM with an accuracy between 0.03 (low x) and 0.05 (high x) in layers as thin as 1.5 nm.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 3 , March 1990 , pp. 578 - 586
Copyright
Copyright © Materials Research Society 1990

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